Shu-Hui Liao

Technology CAD simulation study for self-heating effects in Si/SiGe HBTs on thin-film SOI substrates

The self-heating characteristic of Si/SiGe HBTs on thin-film SOI substrate is investigated by a technology CAD simulator. We examine both of the buried-oxide thickness and the silicon thickness effects on the device characteristics for thermal resistance. Simulation results show that the self-heating effect is not serious for the device under the situation of smaller oxide thickness. Besides, the enhanced silicon thickness can degrade the thermal resistance and thus needs to be carefully considered in device design. The thermal resistance characteristics revealed for Si/SiGe HBTs on thin-film SOI substrate may help to establish more accurate thermal model for reliability of circuit design and device technology optimization.

3D Simulations of Width Effect on Performance in NMOSFETs with SiC S/D Stressors and CSEL Linear

Stress distribution in the Si channel regions of SiC source/drain NMOSFETs with various widths is studied by 3D simulations. The impact of width on performance improvement is analyzed.

Analysis of Electron Mobility in Relaxed and Strained Si 1-x C x Alloys

We have presented the theoretical model for electron mobility in strained Si_1-xC_x alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si_1-xC_x, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well

Investigation of Geometry Scaling Effect on Si BJT and SiGe HBT fabricated on SOI Substrates

In this paper, the key design device parameter of SOI such as the buried oxide thickness, lateral scaling, and thermal effect are studied by 2D device simulator DESSIStrade