Shubham Negi

Performance Analysis of Double Block Layer OLED and Variation in Ratio of Double Block Layer

OLED is the field of organic electronics that has improved tremendously in the past decade and so much that it can be a substitute to the conventional LED. Here in this paper, a simulation of the multilayered OLED with double block layer has been done. Thereafter, the change in ratio of thickness of the two layers comprising the double block layer is made, and its effect on the performance of the device is observed.

Performance analysis of dual gate organic thin film transistor through analytical modeling

Enormous research has been done in the field of organic electronics recently. A lot of innovative practices are anticipated for boosting the device and circuit performance. DG-OTFT i.e. dual gate organic thin film transistors are one of these methods that are used for the enhancement of the organic materials based devices and circuits performance. The DG-OTFT augments the operation of the devices and circuits and also makes the devices sturdy. In this research paper depth analyses of the DG-OTFT for different modes of operation (bottom gate, top gate, and dual gate modes) in terms of threshold voltage, drive current, mobility, sub-threshold slope and current on-off ratio is performed. It is observed that as the two channels are formed in DG-OTFT, it results in superior carrier injection that shows significant enhancement in drive current, in the dual gate mode. Evaluation and validation of electrical characteristics and performance parameters of DG-OTFT using PDPP-TNT as organic semiconductor with the reported experimental results is done using state of the are Atlas 2-D by Silvaco Inc. It is a numerical device 2-D TCAD simulator, and it is observed that the simulation results are in close agreement with experimental data.

Performance analysis of active matrix organic display using vertical channel organic thin film transistor

This research paper analyzes a two transistor active matrix organic light emitting diode (OLED) display using vertical channel OTFT as access and driver transistors. The driver V-OTFT has high on-off ratio and enhances the circuit performance. The OLED used is a single layer, back-emitting OLED, utilizing Poly (p-phenylene vinylene), PPV as organic semiconductor layer. OLED are better than ordinary LEDs and LCD (Liquid Crystal display) in terms of viewing angle and flexibility. The transient and DC response of the circuit are analyzed. A current of about 4 µA flows through the OLED, when switched on, at moderate operating voltage. The display utilizes only organic components and is hence flexible and finds use in large area roll-able displays.

Contact Resistance-Dependent OTFT Behaviour: Effect of Channel Length

The charge injection occurs from contact metals into semiconductors can be inefficient process i.e., non-ohmic. This is due to significant difference amid work function of contact metal and lowest unoccupied molecular orbit (LUMO)/highest occupied molecular orbit (HOMO) level of n/p-organic semiconductor (OSC). Therefore, the contacts in OTFT drop a noteworthy sum of voltage due to occurrence of contact resistance. The effect of contact resistance can be observed at low channel length devices. The electrical characteristics and parameter extractions are done for SG-OTFT at various channel lengths, and the results are observed and analysed using organic module of Atlas 2-D simulator.

Performance Analysis of OLED with Hole Block Layer and Impact of Multiple Hole Block Layer

The organic electronics has become one of the most essential field of research arena due to mechanical flexibility and low temperature fabrication. The organic devices and circuits are improving day by day in their performance and reliability. Organic light emitting diode (OLED) is one of the upcoming fields in this regards. Here, we are trying to improve performance of OLED by adding hole block layers to it. Further impact of number of hole block layers added to device is analyzed. It is observed that adding hole block layers improve device performance to a certain extent and if more and more hole block layers are added, device performance will start to degrade. The organic material based devices & circuits are identified as thrust area by the International Technology Road Map for Semiconductor (ITRS). OLED is considerably better candidate used in large area electronic displays.

Dual Gate Organic Inverter Circuit Behavior Analysis Based on Diode Load Logic Configuration

The dual gate organic thin film transistor (DG-OTFT), at present is one of the most attractive devices in the field of organic electronics because of its overall better performance in comparison to single gate (SG) organic transistors. Organic electronics have shown good mechanical flexibility, lower temperature fabrication at lower cost in comparison to conventional MOSFET devices. They may not stand as a challenge for the MOS devices as of now but still due to their numerous advantages they are being chosen alternative future candidate by the industries, academia and R and D sections. The dual gate OTFT device analysis and its performance parameters extraction has been done in this paper. Besides this, comparison of different modes of operation of the dual gate device has been made, that justifies our working in the dual gate-based devices and circuits. The dual gate organic inverter circuit that has been analyzed is in the diode load logic (DLL) configuration because of its delay is small and speed of operation is better in comparison with zero-Vgs load logic (ZVLL) configuration.

Performance analysis of dual gate-OTFT with variation in OSC thickness and channel length

Organic electronics is attracting the interest of researchers and industries due to its feather weight, meager cost and mechanical flexibility. Many innovative techniques are anticipated for improving the operation of organic material based devices so that they can be used for high speed applications. One such method is usage of dual gate in the organic thin film transistors (DG-OTFT) that makes the organic devices robust. Dual gate structures have better performance in comparison with the single gate organic thin film transistors (SG-OTFT). In this research paper we have analyzed a DG-OTFT using pentacene as organic semiconductor (OSC) since it has high mobility and adequately high current on/off ratio. Subsequently, the performance parameter analysis of dual gate organic transistor is performed in terms of threshold voltage, drive current, subthreshold slope, current on/off ratio, mobility. Furthermore, comparison of dual gate mode with single gate mode (top and bottom both) is analyzed using organic module of Atlas 2-D numerical device simulator. Besides this, the effect of variation in OSC thickness and channel length is also carried out. It is observed that performance enhances with decrease in OSC thickness from 150nm to 80nm, whereas, length of the channel is varied from 50μm to 10μm at a step size of 10. We have observed that variation of OSC thickness does not affect much the performance of DG-OTFT, while, with 80% reduction in channel length the drive current improves by 83%.

Modelling and comparison of single gate and dual gate organic thin film transistor

This paper is aimed at giving the basic knowledge of the organic thin film transistors. To start with basic knowledge of different structures of single gate OTFT has been provided. Thereafter the simulation of BGBC single gate OTFT has been done and the results are shown. Finally the simulation of dual gate OTFT has been done and the results are shown. These two different structures have then been compared based on their performance parameters like threshold voltage, sub-threshold slope, mobility, current ratio. It is seen that the performance of DG-OTFT is better that the single gate OTFT in all the spheres because of the extra gate that has been added. Thus the DG_OTFT devices are more robust and have better performance.

Performance analysis of dual gate organic thin film transistor and organic SR latch application

In recent past, there has been massive research in the field of organic electronics. Many novel techniques are proposed for improving the device and circuit performance. The use of the dual gate organic thin film transistor (DG-OTFT) provides one such technique to enhance the overall performance of organic devices and circuits. The DG-OTFT not only boosts the performance of the device and circuit but also makes them robust. This research paper analyzes the in-depth behavior of the DG-OTFT for top gate, bottom gate and dual gate modes of operation in terms of drive current, mobility, threshold voltage, sub-threshold slope and current on-off ratio. The observed results show higher drive current in the dual gate mode due to formation of two channels resulting in higher carrier injection. The electrical characteristics and performance parameters of DG-OTFT based on PDPP-TNT as organic semiconductor are evaluated and validated with the reported experimental results. The simulation results are in close agreement with experimental data. Consequently, the static and dynamic behavior of organic SR latch based on all p-type DG-OTFT is investigated using organic module of Atlas 2-D numerical device simulator.