Shujie Tang
Chinese Academy of Sciences
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Featured researches published by Shujie Tang.
Scientific Reports | 2013
Shujie Tang; Haomin Wang; Yu Zhang; Ang Li; Hong Xie; Xiaoyu Liu; Lianqing Liu; Tianxin Li; Fuqiang Huang; Mianheng Jiang
To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moiré patterns are observed and the sensitivity of moiré interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05°. The occurrence of moiré pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2·V−1·s−1 at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.
Nature Communications | 2015
Shujie Tang; Haomin Wang; Hui Shan Wang; Qiujuan Sun; Xiuyun Zhang; Chunxiao Cong; Hong Xie; Xiaoyu Liu; Xiaohao Zhou; Fuqiang Huang; Xiaoshuang Chen; Ting Yu; Feng Ding; Mianheng Jiang
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min−1, thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm2 V−1 s−1 at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
Nanotechnology | 2012
Xichao Yang; Shujie Tang; Guqiao Ding; Mianheng Jiang; Fuqiang Huang
A simple and efficient method of thinning graphene with an accuracy of a single layer is proposed, which includes mild nitrogen plasma irradiation and annealing in Ar/O2. On the basis of our data, plasma irradiation induces damages in the top-layer graphene and the annealing removes the damaged layer by fast oxidation. The process was used to turn bilayer graphene into monolayer as well as thin multilayer graphene layer-by-layer via repeated utilization. Combined with electron beam lithography, patterns were fabricated by selectively removing graphene planes. The thinned graphene possesses good quality verified by atomic force microscopic investigation and Raman analysis. The process presented here offers a very useful post-synthesis manipulation of graphene thickness, which may find important applications for graphene-based device fabrication.
Nature Communications | 2017
Lingxiu Chen; Li He; Hui Shan Wang; Haomin Wang; Shujie Tang; Chunxiao Cong; Hong Xie; Lei Li; Hui Xia; Tianxin Li; Tianru Wu; Daoli Zhang; Lianwen Deng; Ting Yu; Mianheng Jiang
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.
Carbon | 2012
Shujie Tang; Guqiao Ding; Ji Chen; Chen Wang; Xuli Ding; Fuqiang Huang; Wei Lu; Mianheng Jiang
Archive | 2012
Honglie Shen; Tianru Wu; Guqiao Ding; Lei Sun; Shujie Tang; Mianheng Jiang
Archive | 2011
Shujie Tang; Guqiao Ding; Ji Chen; Chen Wang; Mianheng Jiang
Nanoscale | 2017
Lingxiu Chen; Haomin Wang; Shujie Tang; Li He; Hui Shan Wang; Xiujun Wang; Hong Xie; Tianru Wu; Hui Xia; Tianxin Li
Archive | 2015
Haomin Wang; Li He; Lingxiu Chen; Hong Xie; Huishan Wang; Shujie Tang; Lei Li; Daoli Zhang; Mianheng Jiang
Bulletin of the American Physical Society | 2013
Haomin Wang; Shujie Tang; Ang Li; Mianheng Jiang