Sihua Zhong

High‐Efficiency Nanostructured Silicon Solar Cells on a Large Scale Realized Through the Suppression of Recombination Channels

Nanostructured silicon solar cells show great potential for new-generation photovoltaics due to their ability to approach ideal light-trapping. However, the nanofeatured morphology that brings about the optical benefits also introduces new recombination channels, and severe deterioration in the electrical performance even outweighs the gain in optics in most attempts. This Research News article aims to review the recent progress in the suppression of carrier recombination in silicon nanostructures, with the emphasis on the optimization of surface morphology and controllable nanostructure height and emitter doping concentration, as well as application of dielectric passivation coatings, providing design rules to realize high-efficiency nanostructured silicon solar cells on a large scale.

Simulation of High-Efficiency Crystalline Silicon Solar Cells With Homo–Hetero Junctions

A novel solar cell structure consisting of both homojunction and heterojunction (homo-hetero junctions), which possesses a potential to realize high photoelectric conversion efficiency, is investigated by the numerical simulation tool AFORS-HET. We demonstrate that the homo-hetero junctions solar cell has a higher fill factor than the solar cell with heterojunction with intrinsic thin layer (HIT), due to the reduced series resistance, which results in a better conversion efficiency, whereas their interfacial density of states (DOS) values are identical. Through a detailed study of the effect of inserting a homojunction, we find that the field-effect passivation can adequately explain the interesting behaviors that the open-circuit voltage increases and the emitter saturation current density declines when increasing the doping concentration in the P-type crystalline silicon layer. In addition, as compared with the HIT solar cell, the homo-hetero junctions solar cell is less sensitive to the DOS due to the field-effect passivation, leading to a comparable open-circuit voltage even if its total interfacial DOS is 10 times higher.

A simple strategy for synthesizing highly luminescent carbon nanodots and application as effective down-shifting layers

We propose a novel strategy to prepare highly luminescent carbon nanodots (C-dots) by employing a hydrothermal method with citric acid as the carbon source and ethylenediamine as the nitrogen source, together with adding moderate ammonia water (AW) to achieve both appropriate inner structure and excellent N passivation. The effect of pH value and AW amount on the luminescence properties has been thoroughly investigated. The photoluminescence quantum yield of the resultant C-dots reaches as high as 84.8%, which is of 10.56% higher than that of the C-dots synthesized in the absence of AW in the reaction precursors. We have further combined the highest luminescent C-dots with polyvinyl alcohol to form luminescent down-shifting layers on silicon nanowire solar cells. An effective enhancement of short-circuit current density has been realized and the contribution of the down-shifting has been extracted quantitatively from the deterioration of surface reflectance and the gain of the optical absorption redistribution by means of a theoretical model on external quantum efficiency analysis.

Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics

Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors. We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination. We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).

Realization of Quasi‐Omnidirectional Solar Cells with Superior Electrical Performance by All‐Solution‐Processed Si Nanopyramids

Abstract Large‐scale (156 mm × 156 mm) quasi‐omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal‐assisted alkaline etching method, which is an all‐solution‐processed method and highly simple together with cost‐effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)‐textured solar cells, the SiNPs‐textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures‐textured solar cells. Furthermore, SiNPs‐textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi‐omnidirectional characteristic. As an overall result, both the SiNPs‐textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs‐textured counterparts. The quasi‐omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of t...

Large-size MACE Si Nano/microstructures For Photovoltaic Applications

By employing the simple, low-cost and compatibility-process metal-assisted chemical etching (MACE) technique, we prepare the large-size Si nano/microstructures (N/M-Strus) and investigate the photovoltaic applications.