Simon Chung

Evaluation of hafnium nitride and zirconium nitride as Hot Carrier absorber

The Hot Carrier (HC) solar cell aims to tackle a major loss in conventional solar cells by collecting the hot carriers before they thermalise. The calculated efficiency of the HC solar cell is very close to the limiting efficiency for an infinite tandem cell. The HC solar cell requires an absorber with a low electronic band gap so that it can absorb a large fraction of the solar spectrum. Importantly the absorber must sufficiently slow down the rate of carrier cooling so that adequate time is available to collect the hot carriers. In this work the main mechanisms of carrier cooling and possible approaches to restrict these mechanisms will be discussed. Hafnium nitride and zirconium nitride are presented as potential absorber materials for HC solar cells. Besides a large “phononic band gap” suitable to block the main carrier cooling mechanism, these materials have reasonable abundance to allow large scale implementation. Recent work on the fabrication of these materials at UNSW will also be presented.

Inelastic X-ray scattering measurements of III–V multiple quantum wells

Inelastic X-ray scattering (IXS) on an In0.17 Ga0.83As/ GaAs0.8 P0.2 multiple quantum well (MQW) superlattice has been conducted to investigate the potential for phonon bottlenecks in low dimensional materials. This work shows that the measured spectra are in good agreement with an adiabatic bond charge model prediction and back-folded phonon modes make large contributions to the broadening of peaks observed in the spectra. The high-lying mode at 45 meV in the MQW is attributed to vibrations of Ga and P and confirmed by both experiment and theory. The acoustic phonons have a dominant contribution from the Ga and As components, and the contribution from InAs is small and only visible at around 29.7 meV. Low energy optical modes resulting from back-folding might be a key to increased electron-phonon coupling in the material system. The suitability of utilizing IXS as a means to investigate phonon modes in low dimensional materials is also discussed.

Hot carrier solar cell absorbers: materials, mechanisms and nanostructures

The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

Potential of hafnium nitride for the hot carrier solar cell

The Hot Carrier solar cell is a third generation photovoltaic concept which has the potential to achieve high efficiencies, exceeding the Shockley-Queisser limit for a conventional p-n junction solar cell. The theoretical efficiencies achievable for the Hot Carrier solar cell is 65% for non-concentrated solar radiation and 85% for maximally concentrated light, very close to the limits of an infinite tandem solar cell. The approach of the Hot Carrier solar cell is to extract carriers generated before thermalisation to the bandgap edge occurs when their excess energy is lost to the environment as heat. To achieve this, the rate of carrier cooling in the absorber must be slowed down sufficiently enough to allow carriers to be collected while they are hot. This work investigates using hafnium nitride as such an absorber to restrict mechanisms of carrier cooling. Hafnium nitride’s phononic properties, where a large ‘phononic band gap’ exist can reduce the carrier cooling rate by means of a phonon bottleneck such that optical phonons cannot decay into acoustic phonons by means of the Klemens’ mechanism. Optical phonon-electron scattering can maintain a hot electron population while acoustic phonons are irrecoverable and lost as heat. The electronic and phononic properties of hafnium nitride are evaluated for their suitability to be used in a Hot Carrier solar cell absorber. Recent work on the fabrication of hafnium nitride at UNSW is presented.

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al2O3/Ge quantum well/Al2O3 and Al2O3/PbS quantum dots/Al2O3 as energy selective contacts

The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction solar cells due to sub-band gap loss and thermalisation of above band gap photons by using a small bandgap absorber, and, importantly, collecting the photo-generated carriers before they thermalise. In this paper we will present recent development of the two critical components of the HC solar cell, i.e., the absorber and energy selective contacts (ESCs). For absorber, fabrication and carrier cooling rates in potential bulk materials — hafnium nitride, zirconium nitride, and titanium hydride are presented. Results of ESCs employing double barrier resonant tunneling structures Al2O3/Ge quantum well (QW)/Al2O3 and Al2O3/PbS quantum dots (QDs)/Al2O3 are also presented. These results are expected to guide further development of practical HC solar cell devices.

Carrier dynamics and phonon properties of hafnium nitride: Potential hot carrier solar cell absorber

Hot carrier solar cells aims to circumvent fundamental loss mechanisms by extracting carriers before thermalization of hot carriers occurs while also minimizing sub-bandgap losses. The absorber must be able to maintain a hot carrier for a sufficiently long time. Hafnium nitride owing to its phononic properties to slow carrier thermalization is a potential absorber for the hot carrier solar cell. The phonon properties have been measured by Raman spectroscopy. The carrier dynamics in hafnium nitride has been studied by ultrafast pump-probe transient absorption where nanosecond long lifetimes have been observed. The carrier temperature has been extracted from the transient absorption spectra to show the carrier temperature remained above 350 K for a long time with a decay time constant of 1.2 ns.

Hot carrier solar cell absorbers: investigation of carrier cooling properties of candidate materials

The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.