Stéphane Coindeau

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

Thick polycrystalline AlN layers were grown at low pressure using high temperature chemical vapor deposition (HTCVD). The experimental setup consists of a graphite susceptor heated by an induction coil surrounding a vertical cold wall reactor. The reactants used were ammonia (NH(3)) and aluminum chloride (AlCl(x)) species formed in situ via chlorine (Cl(2)) reaction with high purity aluminum wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200 and 1600 degrees C. AlN layers have been characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and electron backscattered diffraction. The influence of temperature on growth rate, surface morphology, grain size, and crystalline structure is presented. Growth rates of up to 230 mu m/h have been reached. A nonpolar preferred orientation of AlN films is stabilized at a higher temperature. The potential of investigation in this new range of experimental conditions, i.e., high temperature and high growth rate, as well as deposition of nonpolar AlN crystals, is very promising for epitaxial growth and extends the field of applications

PEALD ZrO2 Films Deposition on TiN and Si Substrates

a STMicroelectronics 850 rue Jean Monnet 38926 Crolles, France. b SIMaP, Grenoble-INP-CNRS-UJF, 1130 rue de la piscine 38402 Saint Martin d’Heres, France. c CMTC, Grenoble-INP, 1260 rue de la piscine 38402 Saint Martin d’Heres, France. d ESRF 6 rue Jules Horowitz 38043 Grenoble, France. e CEA-LETI, Minatec 17 rue des Martyrs 38054 Grenoble, France. f LPCML, Universite Lyon 1 UMR 5620, CNRS, 10 rue Andre-Marie Ampere 69622 Villeurbanne, France.

Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

Undoped and nitrogen doped TiO2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 degrees C and nitrogen incorporation was achieved by using titanium isopropoxide, NH3 and/or N2O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Omega cm (+/-10 Omega cm) combined with an average total transmittance of 60% in the 400-1000 nm wavelength range. Eventually, TiO2 thin films were deposited on the 3D metallic foam template.