Steve Ghanayem

TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices

High‐quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect‐ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface‐reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra‐large‐scale integrated devices.

Homogeneous Tungsten Chemical Vapor Deposition on Silane Pretreated Titanium Nitride

Homogeneous nucleation of tungsten chemical vapor deposition (CVD) films on metallorganic (MO) CVD substrates has been achieved by pretreating the substrate with at a wafer susceptor temperature of . Deposition of approximately a monolayer of silicon from the pretreatment results in continuous, uniform tungsten films less than thick. Tungsten nucleation films grown on MOCVD without a pretreatment were heterogeneous, with tungsten islands not coalescing into a continuous film until the thickness reached . Experimental results are presented along with implications for use of tungsten CVD for vertical interconnects in high aspect ratio vias. ©1999 The Electrochemical Society

Integrated deposition and etchback of tungsten in a multi-chamber, single-wafer system

An integrated deposition and etchback process to form tungsten plugs in submicron contacts and vias was developed using experimental design and response-surface methodology to characterize both the low-pressure chemical vapor deposition (LPCVD) chamber and the magnetron-enhanced etchback chamber for 150-mm-diameter wafer processing. Tungsten was deposited at 80 torr and 475 degrees C by the H/sub 2/ reduction of WF/sub 6/. Etchback was then carried out in two steps: bulk tungsten was etched with an Ar/SF/sub 6/ mixture until excited N/sub 2/ molecules from the underlying TiN adhesion layer were detected in the plasma, and residual TiN was then etched for a fixed time with an Ar/Cl/sub 2/ plasma. Both etching steps employ a rotating magnetic field. Although the use of the magnetic field has no pronounced effect on the etch rate of ether film, it provides broad regions of highly uniform etching. In addition, the DC bias voltage, which was measured as part of the TiN study, decreases with increasing magnetic field without reducing the etch rate of the film.<<ETX>>