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Dive into the research topics where Randhir Thakur is active.

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Featured researches published by Randhir Thakur.


Journal of Vacuum Science & Technology B | 2003

Effect of NH3 thermal treatment on an atomic layer deposited on tungsten films and formation of W–B–N

Jeong Soo Byun; Alfred Mak; Amy Zhang; Alex Yoon; Tong Zhang; Avgerinos V. Gelatos; Robert L. Jackson; Randhir Thakur; Sang-Yun Lee; Hyoungsub Kim

The effect of ammonia (NH3) ambient annealing on a tungsten (W) film deposited by atomic layer deposition at temperatures ranging from 400–700 °C is discussed. The as-deposited film contains approximately 20 at. % of boron which is chemical bound to W (W–B) having a resistivity of 128 μΩ cm. The film has an amorphous structure, which does not transform into crystalline phase during annealing. As a result of annealing in NH3 ambient, a tungsten ternary phase (W–B–N) forms at the surface; its binding configuration depends on the annealing temperature. Below 500 °C, nitrogen is chemically bonded to tungsten (W–N) while maintaining a W–B bond. Above 600 °C, nitrogen-rich W–B–N forms, in which nitrogen atoms have chemical binding with boron (B–N) and tungsten (W–N). It was found that a film annealed at higher temperatures has a resistivity of 107 μΩ cm, and thermal desorption of boron and nitrogen containing species is not observed during the thermal process. In addition, tungsten oxide formed at the surface d...


Archive | 2003

Apparatus for cyclical deposition of thin films

Randhir Thakur; Alfred Mak; Ming Xi; Walter Benjamin Glenn; Ahmad A. Khan; Ayad Al-Shaikh; Avgerinos V. Gelatos; Salvador P. Umotoy


Archive | 2004

Stabilization of high-k dielectric materials

Christopher S. Olsen; Pravin K. Narwankar; Shreyas Kher; Randhir Thakur; Shankar Muthukrishnan; Philip A. Kraus


Archive | 2002

Metal nitride formation

Jeong Byun; Alfred Mak; Hui Zhang; Hyungsuk Alexander Yoon; Avgerinos V. Gelatos; Robert L. Jackson; Ming Xi; Randhir Thakur


Archive | 2005

Substrate processing apparatus using a batch processing chamber

Randhir Thakur; Steve Ghanayem; Joseph Yudovsky; Aaron Webb; Adam Brailove; Nir Merry; Vinay Shah; Andreas G. Hegedus


Archive | 2002

Method of increasing the etch selectivity of a contact sidewall to a preclean etchant

Zheng Yuan; Steve Ghanayem; Randhir Thakur


Archive | 2014

Processing systems and methods for halide scavenging

Anchuan Wang; Zihui Li; Hiroshi Hamana; Zhijun Chen; Ching-Mei Hsu; Jiayin Huang; Nitin K. Ingle; Dmitry Lubomirsky; Shankar Venkataraman; Randhir Thakur


Archive | 2005

Method and apparatus for semiconductor processing

Randhir Thakur; Michael Splinter


Archive | 2014

Metal air gap

Vinod R. Purayath; Randhir Thakur; Nitin K. Ingle


Archive | 2005

Processing multilayer semiconductors with multiple heat sources

Sundar Ramamurthy; Andreas G. Hegedus; Randhir Thakur

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