Steven J. Zier

A 6.4-Gb/s CMOS SerDes core with feed-forward and decision-feedback equalization

A 4.9-6.4-Gb/s two-level SerDes ASIC I/O core employing a four-tap feed-forward equalizer (FFE) in the transmitter and a five-tap decision-feedback equalizer (DFE) in the receiver has been designed in 0.13-/spl mu/m CMOS. The transmitter features a total jitter (TJ) of 35 ps p-p at 10/sup -12/ bit error rate (BER) and can output up to 1200 mVppd into a 100-/spl Omega/ differential load. Low jitter is achieved through the use of an LC-tank-based VCO/PLL system that achieves a typical random jitter of 0.6 ps over a phase noise integration range from 6 MHz to 3.2 GHz. The receiver features a variable-gain amplifier (VGA) with gain ranging from -6to +10dB in /spl sim/1dB steps, an analog peaking amplifier, and a continuously adapted DFE-based data slicer that uses a hybrid speculative/dynamic feedback architecture optimized for high-speed operation. The receiver system is designed to operate with a signal level ranging from 50 to 1200 mVppd. Error-free operation of the system has been demonstrated on lossy transmission line channels with over 32-dB loss at the Nyquist (1/2 Bd rate) frequency. The Tx/Rx pair with amortized PLL power consumes 290 mW of power from a 1.2-V supply while driving 600 mVppd and uses a die area of 0.79 mm/sup 2/.

40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology

Product designs for 40 Gbit/sec applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will briefly discuss technology aspects relating to HBT device operation at high speed, acting to dispel some common misconceptions regarding SiGe HBT technology applicability to 40 Gbit/sec circuits. The high speed portions of the 40 Gbit/sec system are then addressed individually, demonstrating substantial results toward product offerings, on each of the critical high speed elements.

A 0.18 /spl mu/m SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

A BiCMOS CDR/1:4-DEMUX and CMU/4:1-MUX chipset targeting 40-43 Gb/s optical communications is implemented in 0.18 /spl mu/m SiGe. At 43 Gb/s and up to 100/spl deg/C chip temperature, both ICs operate at BER <10/sup -15/ and <210 fs RMS clock jitter. The receiver and transmitter chips dissipate 2.8 W and 2.3 W, respectively, from a -3.6 V supply.

SiGe BiCMOS integrated circuits for high-speed serial communication links

Considerable progress has been made in integrating multi-Gb/s functions into silicon chips for data- and telecommunication applications. This paper reviews the key requirements for implementing such functions in monolithic form and describes their implementation in the IBM SiGe BiCMOS technology. Aspects focused on are the integration of 10-13-Gb/s serializer/deserializer chips with subpicosecond jitter performance, the realization of 40-56-Gb/s multiplexer/demultiplexer functions and clock-and-data- recovery/clock-multiplier units, and, finally, the implementation of some analog front-end building blocks such as limiting amplifiers and electro-absorption modulator drivers. Highlighted in this paper are the key challenges in mixed-signal and analog integrated circuit design at such ultrahigh data rates, and the solutions which leverage high-speed and microwave design and broadband SiGe technologies.

Multi Gbit/s, high-sensitivity all silicon 3.3 V optical receiver using PIN lateral trench photodetector

We report a 3.3 V silicon optical receiver consisting of a CMOS-compatible lateral trench PIN photodiode and a transimpedance amplifier that achieved a sensitivity of -17. 1 dBm at 2.5 Gb/s and demonstrated error-free (BER<10/sup -10/) operation up to 6.5 Gb/s at 845 nm. This is the highest reported sensitivity at data rates above 2.0 Gb/s and the fastest operation of any Si-based optical receiver.