Sung-il Bang

A design of tunable component for font end module

This paper describes VCO designs based on varactor tuned architecture. The oscillators of FMCW generator have been designed in a 0.13μm SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are 2.98 GHz. The VCO chip achieve low phase noise characteristics -102.68 dBc/Hz at 1 MHz offset from the tunable frequency.

Novel New Approach to Improve Noise Figure Using Combiner for Phase-Matched Receiver Module with Wideband Frequency of 6–18 GHz

This paper proposes the design and measurement of a 6–18 GHz front-end receiver module that has been combined into a one- channel output from a two-channel input for electronic warfare support measures (ESM) applications. This module includes a limiter, high-pass filter (HPF), power combiner, equalizer and amplifier. This paper focuses on the design aspects of reducing the noise figure (NF) and matching the phase and amplitude. The NF, linear equalizer, power divider, and HPF were considered in the design. A broadband receiver based on a combined configuration used to obtain low NF. We verify that our receiver module improves the noise figure by as much as 0.78 dB over measured data with a maximum of 5.54 dB over a 6–18 GHz bandwidth; the difference value of phase matching is within 7° between ports.

The design of low power high gain transformer feedback amplifier

In this paper, we present a low power consumption and high gain low noise amplifier using transformer feedback to neutralize the gate-source overlap capacitance of a FET. It is a single-ended amplifier designed in 65nm CMOS technology for 60 GHz transceiver. This LNA achieves a simulated gain of 10.46 dB, noise figure of 3.216 dB at 60 GHz.

The design of high gain amplifier with transformer feedback combination

In this paper, we present a low power consumption and high gain low noise amplifier using transformer feedback to neutralize the gate-source and gate-drain overlap capacitance of a FET. It is a single-ended amplifier designed in 65nm CMOS technology for 60 GHz transceiver. This LNA achieves a simulated gain of 10.64 dB, noise figure of 3.10 dB at 60 GHz.

Thermal memory effect modeling and compensation for GaN Doherty amplifier

This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifiers distortion generation and suggests thermal memory effect compensator for pre-distorter. Also this paper reports on the development of advanced Doherty amplifier structure with limiter and linear amplifier. A compensated LLHD amplifier enhances ACLR performance about 22 dB.