Tadao Kushima

Advanced high current, high reliable IGBT module with improved multi-chip structure

Advanced IGBT module technology to realize high reliability and high current capability was presented. The 60,000 cycles long term power cycle capability of the low thermal expansion base module was demonstrated. A stress release tall mounting structure and a ceramic metal pull back structure were shown to be essential for high thermal cycle capability. A multi-end main terminal with multichip substrate and high resistivity sense emitter terminal technology was applied to realize high current capability and uniformity in the large high power module.

3300 V 400 A, 600 A and 1200 A high power IGBT modules with high reliability for traction applications

Newly developed 3300 V IGBT modules with current ratings of 400 A, 600 A and 1200 A for traction applications are described. Single or parallel use of these modules can provide coverage of the whole motor range of GTO inverter systems for traction applications. The IGBT modules consist of newly developed IGBT chips with improved terminations for high blocking voltage and soft and fast recovery mode chips with high reverse recovery di/dt capability. The new IGBTs have a lower switching loss as compared with a conventional IGBT. A baseplate with low thermal expansion extends their fatigue lifetime to more than 5 times that of a conventional module. Low thermal impedance is achieved by a simple mode structure with optimal arrangement of IGBT and diode chips for both thermal and electric characteristics. Solder and wire-bonding reliabilities of the modules are kept high throughout the fatigue lifetime despite their large size.