Tadashi Iguchi

Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

1. Abstract To reduce the short channel effect for memory cell transistors beyond 2Xnm cell size for NAND Flash memories, we propose a depletion-type cell transistor fabricated on a self-manufactured partial SOI substrate by conventional LSI process and solid phase epitaxy. The memory cell transistors with stack-gate show well program / erase properties and have the typical S-factor of 366mV/decay. Short channel effect is reduced substantially to available level for 2Xnm size NAND Flash memory.

Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory

To reduce the short-channel effect for memory cell transistors beyond 2× nm cell size for NAND electrically erasable programmable read only memories (EEPROMs), we propose a depletion-type cell transistor fabricated on a self-manufactured partial silicon-on-insulator (SOI) substrate by conventional LSI process and solid-phase epitaxy. The memory cell transistors with stack-gate show good program/erase properties and have the good S-factor of 309 mV/decade, wide enough threshold voltage (Vth) window of 15 V between program and erase state, and fast enough program and erase time of 100 µs and 100 µs. And we observed no significant Vth-window narrowing and increase in Vth of about 1 V after 1000 cycling test. Operation bias sets of the depletion-type NAND EEPROM are as same as the sets of conventional NAND EEPROM and no peripheral circuit design change is needed. The short-channel effect is reduced substantially to available level for 2× nm size NAND EEPROM.