Takanori Ozawa

Preparation of (Pb, La) (Zr, Ti)O3 ferroelectric films by RF sputtering on large substrate

(Pb, La)(Zr, Ti)O 3 (PLZT) thin films were deposited on 6-inch Pt/Ti/SiO 2 /Si substrates by rf magnetron sputtering using a multichamber production system. The Pb content in PLZT films deposited at low temperature was measured by inductively coupled plasma (ICP) spectroscopy, and the structural properties of crystallized PLZT films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). A novel method for Pb content control was developed and it was found that Pb content in PLZT film could be changed by changing the electric potential of the substrate. For ferroelectric properties, only small differences were observed between the rapid thermally annealed PLZT film and furnace- annealed ones. Good uniformities of film thickness, Pb content and remanent polarization were achieved on 6-inch wafers.

Lead content control of PLZT thin films prepared by RF magnetron sputtering

Abstract PLZT thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering using a multichamber type production system. The lead (Pb) content in low temperature deposited PLZT films was measured by ICP spectroscopy and structural properties of rapid thermally annealed PLZT films were characterized by X-ray diffraction and scanning electron microscopy. It is found that several sputtering parameters such as RF power, argon (Ar) gas flow and magnetic field were very effective to control the Pb content which is essential for obtaining good ferroelectric properties.