Takatoshi Yamashita

High performance medium current ion implanter system EXCEED3000AH‐G3

A new medium current ion implanter has been developed based on the EXCEED3000, which is highly reliable and widely used in 300mm fabs. The ion implanter now has to be designed so that it can precisely measure and control beam characteristics. For example beam angles have to be controlled in halo implantation because high tilt angle implantation is done according to the device geometric structure. Not only horizontal beam profile system but also vertical beam profile system are implemented in EXCEED3000AH‐G3 for the precise implantation control.

Cleaning procedure for indium implantation

Indium implantation in a medium current ion implantation becomes a common requirement for the next generation VLSI fabrication. It is essential to keep high utilization rate of equipment to reduce the cost of VLSI fabrication. As for a medium current ion implanter, running all ion species including indium ion in one machine is the solution to keep high utilization rate of the machine. To use the indium ion with other ion species in a medium current ion implanter, it is necessary to control the cross contamination of the indium when implantation other ion species. In this paper, experimental data of the indium cross contamination at B, P, As implantation is reviewed and effective cleaning procedure to reduce cross contamination and other side effects of indium usage is reported.

Nissin Ion Equipment Indirectly Heated Cathode Ion

To apply a multiply‐charged ion beam to device fabrication, it is indispensable to improve the beam current while also increasing the short lifetime of ion source caused by the wear‐out of the filament. The advantage of the indirectly heated cathode (IHC) configuration is well known as a means of extending the lifetime in a severe plasma environment. From this point of view, the IHC ion source, which is designed for the EXCEED2300 & 3000 series, has been developed to expand the capability of EXCEED series as the single wafer high energy ion implantation tool. We report the performance of IHC ion source with higher multiply‐charged ion beam current and longer lifetime than a Bernas type ion source.