Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Teiji Majima is active.

Publication


Featured researches published by Teiji Majima.


Journal of Applied Physics | 1996

Anodization behavior of Al, and physical and electrical characterization of its oxide films

Kiyoshi Ozawa; Teiji Majima

We have investigated the physical and electrical properties of anodic oxide films treated by a variety of aqueous electrolyte solutions. All anodic oxide diodes revealed consecutive current regimes varying with bias voltage as V, V2, and Vn (n≳2) in the steady‐state current‐voltage characteristics. Here, the transition voltage from the V2 to Vn current regime and the voltage exponent n varied depending on the oxide forming electrolyte and the bias direction of the diodes. These electrical properties were interpreted as a space‐charge‐limited current modified by a distributed gap state density in space and in energy. The oxide had a double‐layer structure, a layer containing an anion characteristic of each electrolyte and an anion‐free layer. The anion‐containing layer had a varying gap state distribution. This was due to the anion characteristics, which reduce a deep‐lying gap state density and modify a tail state density. We propose two practical anodizing techniques to control the depth profile of the a...


IEEE Transactions on Magnetics | 1979

An 8 µm period bubble memory device with relaxed function designs

S. Orihara; T. Yanase; Teiji Majima

A new design concept for 8 μm period bubble memory devices is proposed. Pattern periods and sizes in function designs are increased, keeping the storage cell size 8 μm × 8 μm. This can relax spacial restrictions for the function pattern designs and is remarkably effective in maintaining low drive fields for the functions. Chip organizations which match this function design are discussed and a 256 kbit 8 μm period chip organized with block replicate gates and true swap gates has been designed. The characteristics obtained for the drive field, replicate phase margin, swap current margin, etc., are as good as those of 16 μm period 3 μm bubble devices. A chip organization of a 1 megabit device with a short access time is also proposed.


Journal of Applied Physics | 1999

Inhomogeneity of anodic oxide films of Al and Al alloys characterized by scanning electron microscopy observation and analysis of frequency response behavior

Kiyoshi Ozawa; Teiji Majima

Inhomogeneity of anodic oxide films of pure Al, Al-0.42 at. % Ta, Al-1.1 at. % Ta, Al-0.5 at. % Ti, and Al-1.0 wt % Si formed in various electrolyte solutions has been investigated. Scanning electron microscopy observation of their cross sections revealed their structural inhomogeneity: they consist of an inner layer element with a smooth texture and an outer layer element distinguished by its textural properties such as roughness and macroscopic voids. An imaginary part of the impedance for those oxides revealed their electrical inhomogeneity: their impedance spectra were fitted by the summation of characteristic Debye functions, PC, PV1, and PV2, in the frequency regime where direct current conduction predominated. This indicates that three differing processes of charge transport coexist. Only PC which had the shortest conductivity relaxation time was manifested for the oxide, where a smooth texture was observed. PV1 which had the second shortest relaxation time was predominantly manifested for the oxid...


Journal of The Electrochemical Society | 1994

Anodic Oxide Films as a Gate Dielectric for a Thin Film Transistor

Kiyoshi Ozawa; Katsuyuki Miyazaki; Teiji Majima

A comprehensive study is made of the anodization behavior and electrical and physicochemical properties of anodic oxides for use as thin film transistor (TFT) gate dielectrics. The matrix metals examined are pure Al, Al-1.1 atom percent (a/o) Ta, Al-0.5 a/o Ti, and Al-1.0 weight percent Si, and electrolytes in aqueous solution are ammonium tartrate, triammonium citrate, diammonium hydrogenphosphate, and ammonium tetraborate-boric acid. Breakdown voltage in anodization, which corresponds to maximum formable thickness, was highest for the oxide of Al-Ta for all solutions. A dielectric strength of over 7.0×10 6 V/cm was achieved for oxides of the combinations Al-Ta and Al-Ti/inorganic solution


Journal of Applied Physics | 1979

Stretcher design study for 1.5 μm bubble devices

T. Yanase; Teiji Majima; S. Orihara

Column period dependence of an asymmetrical chevron stretcher for 1.5 μm bubble devices has been studied under some film thickness conditions. The asymmetrical chevron stretchers with large column periods improve upper thresholds of bias margins although the 15 μm period degrades both upper and lower thresholds of the bias margins. A newly designed stretcher called Mt.Fuji has been developed, which has excellent stretching margin even at the period of 15 μm, typically 40 Oe bias margin at 55 Oe with a triangular wave drive. Nelson type detector for 1.5 μm bubble has been studied. Sensitivity of 0.25 % has been obtained.


Journal of Applied Physics | 1981

Megabit bubble memory process using a new type resin and TaMo alloy‐Au conductor

Teiji Majima; A. Hirano; S. Orihara

A newly developed heat resistant resin, ladder type organosiloxane polymer, is applied to 8 μm period 1 megabit bubble memory devices. Propagation bias margin and reliability are discussed, comparing with the conventional SiO lift‐off planar process. TaMo alloy‐Au system is also introduced for the conductor. Interdiffusion, electromigration, and corrosion resistance of Au and refractory metals are studied.


Japanese Journal of Applied Physics | 1977

Fabrication of 3 µm Bubble 80 kbit Chips

Shunsuke Dipl Ing Matsuyama; Kohji Igarashi; Teiji Majima; S. Orihara

A 3 µm bubble 80 kbit chip was designed by 1/2 scaling from the pattern for 6 µm bubble chip. To obtain a 1 µm minimum feature over a 5 mm square, projection printing was employed. By reducing the reflectance of the surface to be exposed below 33%, standing wave effects with monochromatic illumination could be minimized, and uniform 2 µm width and 1 µm gap pattern could be obtained, notwithstanding the variation in photoresist thickness and the unevenness of substrate. A standard deviation of this distribution in the pattern gap width in the fabricated 80 kbit chips was 0.067 µm when the flatness of the wafer is less than 0.5 µm/chip size. The effects of the variation in the pattern gap on the propagate margins could be ignored, if it fell in the range of 1.03 µm to 1.38 µm. Consequently, the resolution of 1±0.3 µm and uniform bias margin over 80 kbit chip area could be achieved with high yield.


IEEE Transactions on Magnetics | 1985

Study on less-than-4-µm period permalloy propagation tracks using a new narrow-gap delineation technique

Y. Yonekura; T. Yanase; Teiji Majima; H. Watanabe

We have developed a new narrow-gap delineation technique using conventional photolithography, which can decrease the gap size down to 0.2 μm by ion-milling Cu-coated 1-μm-gap photo resist patterns. By applying this narrow gap process to a new bubble propagation structure, less-than-4-μm-period propagation tracks and turns were designed and tested. Good propagation performance in a 3 μm period straight track and 180° turns was obtained at quasi-static operation with three consecutive 1 μm bubbles although no bias margin of consecutive bubbles was obtained in less-than-2.6-μm-period tracks even at the drive field of 80 Oe.


Archive | 1993

Thin film transistor matrix device

Hideaki Takizawa; Yasuhiro Nasu; Kazuhiro Watanabe; Shiro Hirota; Kazuo Nonaka; Seii Sato; Teiji Majima


Archive | 1984

Method for forming patterns

Teiji Majima; Hiromichi Watanabe

Collaboration


Dive into the Teiji Majima's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar

Kiyoshi Ozawa

National Institute for Materials Science

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge