Teresa Cusati

Photodynamics and Time-Resolved Fluorescence of Azobenzene in Solution: A Mixed Quantum-Classical Simulation

We have simulated the photodynamics of azobenzene by means of the Surface Hopping method. We have considered both the trans → cis and the cis → trans processes, caused by excitation in the n → π* band (S(1) state). To bring out the solvent effects on the excited state dynamics, we have run simulations in four different environments: in vacuo, in n-hexane, in methanol, and in ethylene glycol. Our simulations reproduce very well the measured quantum yields and the time dependence of the intensity and anisotropy of the transient fluorescence. Both the photoisomerization and the S(1) → S(0) internal conversion require the torsion of the N═N double bond, but the N-C bond rotations and the NNC bending vibrations also play a role. In the trans → cis photoconversion the N═N torsional motion and the excited state decay are delayed by increasing the solvent viscosity, while the cis → trans processes are less affected. The analysis of the simulation results allows the experimental observations to be explained in detail, and in particular the counterintuitive increase of the trans → cis quantum yield with viscosity, as well as the relationship between the excited state dynamics and the solvent effects on the fluorescence lifetimes and depolarization.

Semiempirical Hamiltonian for Simulation of Azobenzene Photochemistry

We present a semiempirical Hamiltonian that provides an accurate description of the first singlet and triplet potential energy surfaces of azobenzene for use in direct simulations of the excited-state dynamics. The parameterization made use of spectroscopic and thermochemical data and the best ab initio results available to date. Two-dimensional potential energy surfaces based on constrained geometry optimizations are presented for the states that are most relevant for the photochemistry of azobenzene, namely, S(0), S(1), and S(2). In order to run simulations of the photodynamics of azobenzene in hydrocarbons or hydroxylic solvents, we determined the interactions of methane and methanol with the azo group by ab initio calculations and fitted the interactions with a QM/MM interaction Hamiltonian.

Oscillator strength and polarization of the forbidden n→π* band of trans-azobenzene : A computational study

The trans-azobenzene molecule is thought to prefer a planar C2h geometry, in gas phase as well as in solution, according to the most recent computational studies. As a consequence, the weak n-->pi* absorption band is forbidden by symmetry at the equilibrium geometry, and its intensity depends on the effect of the vibrational motions on the electronic structure. In this computational study, we determine the contribution of the vibrational modes to the oscillator strength, taking into account the anharmonicity, the thermal distributions, and the solvent effects. The good agreement of our results with the measured absorption spectrum confirms the C2h equilibrium structure of trans-azobenzene, with a relatively easy torsion of the phenyl groups around the N--C bonds. We also address the question of the polarization of this transition, which is a preliminary step to interpret the time-resolved fluorescence anisotropy measurements [C.-W. Chang et al., J. Am. Chem. Soc., 126, 10109 (2004)], a very sensitive probe of solvent effects on the excited state dynamics.

Electrical properties of graphene-metal contacts

The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and metal. A low contact resistance is an imperative requirement to consider graphene as a candidate material for electronic and optoelectronic devices. Unfortunately, measurements of contact resistance in the literature do not provide a consistent picture, due to limitations of current graphene technology, and to incomplete understanding of influencing factors. Here we show that the contact resistance is intrinsically dependent on graphene sheet resistance and on the chemistry of the graphene-metal interface. We present a physical model of the contacts based on ab-initio simulations and extensive experiments carried out on a large variety of samples with different graphene-metal contacts. Our model explains the spread in experimental results as due to uncontrolled graphene doping and suggests ways to engineer contact resistance. We also predict an achievable contact resistance of 30 Ω·μm for nickel electrodes, extremely promising for applications.

Trajectory integration with potential energy discontinuities

Many approximate methods of quantum chemistry yield potential energy surfaces with discontinuities. While clearly unphysical, such features often fall within the typical error bounds of the method, and cannot be easily eliminated. The integration of nuclear trajectories when the potential energy is locally discontinuous is obviously problematic. We propose a method to smooth out the discontinuities that are detected along a trajectory, based on the definition of a continuous function that fits locally the computed potential, and is used to integrate the trajectory across the discontinuity. With this correction, the energy conservation error can be reduced by about one order of magnitude, and a considerable improvement is obtained in the energy distribution among the internal coordinates.

High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.

Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2

In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS

Understanding the nature of metal-graphene contacts: A theoretical and experimental study

_2

Two-dimensional transistors based on MoS 2 lateral heterostructures

, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and low power applications. Performance potential has been evaluated by means of detailed multi-scale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor.

Photodynamics of azobenzene in a hindering environment

In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.