Th. Schurig

Quantum properties of two-dimensional electron gas in the inversion layer of Hg1−xCdxTe bicyrstals

Abstract The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg1−xCdxTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 103 MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity the characteristics parameters of the electric subbands (subband populations nsi, subband energies EF−Ei, effective electron masses m∗ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg1−xCdxTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.