Thomas A. Friedmann

Young's modulus, Poisson's ratio and failure properties of tetrahedral amorphous diamond-like carbon for MEMS devices

The elastic and failure mechanical properties of hydrogen-free tetrahedral amorphous carbon (ta-C) MEMS structures were investigated via in situ direct and local displacement measurements by a method that integrates atomic force microscopy (AFM) with digital image correlation (DIC). On-chip MEMS-scale specimens were tested via a custom-designed apparatus that was integrated with an AFM to conduct in situ uniaxial tension tests. Specimens 10 µm and 50 µm wide and of 1.5 µm average thickness were used to measure the elastic properties while 340 µm wide tension specimens with a central elliptical perforation resulting in a stress concentration factor of 27 were tested to investigate local effects on material strength. The Youngs modulus, Poissons ratio and tensile strength were measured as 759 ± 22 GPa, 0.17 ± 0.03 and 7.3 ± 1.2 GPa, respectively. In an effort to understand the effect of local defects and assess the true material strength, the local failure stress at sharp central elliptical notches with a stress concentration factor of 27 was measured to be 11.4 ± 0.8 GPa. The AFM/DIC method provided for the first time local displacement fields in the vicinity of microscale perforations and these displacement fields were in accordance with those predicted by linear elasticity.

Experimental demonstration of a laterally deformable optical nanoelectromechanical system grating transducer

We experimentally demonstrate operation of a laterally deformable optical nanoelectromechanical system grating transducer. The device is fabricated in amorphous diamond with standard lithographic techniques. For small changes in the spacing of the subwavelength grating elements, lossy propagating resonant modes in the plane of the grating cause a large change in the optical reflection amplitude. An in-plane motion detection sensitivity of 160 fm/square root(Hz) was measured, exceeding that of any other optical microelectromechanical system transducer to our knowledge. Calculations predict that this sensitivity could be improved to better than 40 fm/square root(Hz) in future designs. In addition to having applications in the field of inertial sensors, this device could also be used as an optical modulator.

Laterally deformable nanomechanical zeroth-order gratings: anomalous diffraction studied by rigorous coupled-wave analysis

We describe a novel optomechanical device that produces strong reflectance and polarization modulation of incident light. The structure is based on a suspended nanomechanical grating with lateral deformability, and rigorous coupled-wave analysis has been used to fully model the optical properties of the device. The grating consists of two interdigitated gratings that may be moved with respect to each other with an applied force. The structures proposed here are designed to be readily manufacturable with device processing developed for surface-micromachined microelectromechanical systems and with known microelectromechanical systems materials, such as silicon, silicon nitride, and amorphous diamond. As the spacing of the grating is changed, an anomalous diffraction effect is observed, a Woods type anomaly in which there exists a resonance in propagating leaky modes within the grating, resulting in a dramatic change in the reflectance characteristics for slight changes in the grating. One of the unique features of this structure is that a reflected optical signal can be used to detect subangstrom in-plane motion of structures greater than 10 nm.

Nanosecond laser induced ignition thresholds and reaction velocities of energetic bimetallic nanolaminates

Thresholds for optically igniting self-propagating reactions are quantified for energetic Ni/Ti, Co/Al, and Al/Pt nanolaminates, where smaller enthalpy material pairs required larger laser ignition fluences. The threshold fluences (J/cm2) for ignition by 30 ns laser pulses focused to ∼8u2002μm spot size varied from 720 to 15u2009000u2002J/cm2 for Ni/Ti, 8.6 to 380u2002J/cm2 for Co/Al, and 3.2 to 27u2002J/cm2 for Al/Pt. Conversely, smaller enthalpy nanolaminates exhibited reduced steady-state propagation speeds ranging from 0.05 to 0.9 m/s for Ni/Ti, 0.6 to 8.5 m/s for Co/Al, and 24 to 73 m/s for Al/Pt. Increasing the laser spot diameter tenfold reduced the ignition threshold fluence by as much as two orders of magnitude.

Ultrathin Flexible Crystalline Silicon: Microsystems-Enabled Photovoltaics

We present an approach to create ultrathin (<;20 μm) and highly flexible crystalline silicon sheets on inexpensive substrates. We have demonstrated silicon sheets capable of bending at a radius of curvature as small as 2 mm without damaging the silicon structure. Using microsystem tools, we created a suspended submillimeter honeycomb-segmented silicon structure anchored to the wafer only by small tethers. This structure is created in a standard thickness wafer enabling compatibility with common processing tools. The procedure enables all the high-temperature steps necessary to create a solar cell to be completed while the cells are on the wafer. In the transfer process, the cells attach to an adhesive flexible substrate which, when pulled away from the wafer, breaks the tethers and releases the honeycomb structure. We have previously demonstrated that submillimeter and ultrathin silicon segments can be converted into highly efficient solar cells, achieving efficiencies up to 14.9% at a thickness of 14 μm. With this technology, achieving high efficiency (>;15%) and highly flexible photovoltaic (PV) modules should be possible.

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

We report the observation of the integer quantum Hall states at Landau level fillings of ν=2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared via argon-assisted graphitization. The two-dimensional electron gas exhibits a low-temperature (at 4 K) carrier mobility of ∼14u2009000u2002cm2/Vu2009s at the electron density of 6.1×1011u2002cm−2. Furthermore, the sheet resistance obtained from four-probe measurements across the whole area (12×6u2002mm2) of another specimen grown under similar condition displays roughly uniform values (∼1600u2002Ω/square), suggesting that the macroscopic steps and accompanying multilayer graphene domains play a minor role in the low-temperature electronic transport.

Developing a New Material for MEMS: Amorphous Diamond

Amorphous diamond is a new material for surface-micromachined microelectromechanical systems (MEMS) that offers promise for reducing wear and stiction of MEMS components. The material is an amorphous mixture of 4-fold and 3-fold coordinated carbon with mechanical properties close to that of crystalline diamond. A unique form of structural relaxation permits the residual stress in the material to be reduced from an as-deposited value of 8 GPa compressive down to zero stress or even to slightly tensile values. Irreversible plastic deformation, achieved by heat treating elastically strained structures, is also possible in this material. Several types of amorphous diamond MEMS devices have been fabricated, including electrostatically-actuated comb drives, micro-tensile test structures, and cantilever beams. Measurements using these structures indicate the material has an elastic modulus close to 800 GPa, fracture toughness of 8 MPa·m 1/2 , an advancing H2O contact angle of 84° to 94°, and a surface roughness of 0.1 to 0.9 nm R.M.S. on Si and SiO2, respectively.

Resist substrate studies for LIGA microfabrication with application to a new anodized aluminum substrate

Resist substrates used in the LIGA process must provide high initial bond strength between the substrate and resist, little degradation of the bond strength during x-ray exposure, acceptable undercut rates during development and a surface enabling good electrodeposition of metals. Additionally, they should produce little fluorescence radiation and give small secondary doses in bright regions of the resist at the substrate interface. To develop a new substrate satisfying all these requirements, we have investigated secondary resist doses due to electrons and fluorescence, resist adhesion before exposure, loss of fine features during extended development and the nucleation and adhesion of electrodeposits for various substrate materials. The result of these studies is a new anodized aluminum substrate and accompanying methods for resist bonding and electrodeposition. We demonstrate the successful use of this substrate through all process steps and establish its capabilities via the fabrication of isolated resist features down to 6 µm, feature aspect ratios up to 280 and electroformed nickel structures at heights of 190 to 1400 µm. The minimum mask absorber thickness required for this new substrate ranges from 7 to 15 µm depending on the resist thickness.

Measurement of a laterally deformable optical MEMS grating transducer

We have experimentally demonstrated operation of a laterally deformable optical NEMS grating transducer. The device is fabricated in amorphous diamond on a silicon substrate with standard lithographic techniques. For small changes in the spacing of the grating elements, a large change in the optical reflection amplitude is observed. An in-plane motion detection sensitivity of 160 fm/√Hz has been measured, which agrees well with theoretical models. This sensitivity compares favorably to that of any other MEMS transducer. Calculations predict that this sensitivity could be improved by up to two orders of magnitude in future designs. As well as having applications to the field of accelerometers and other inertial sensors, this device could also be used as a modulator for optical switching.

Electron?electron interaction in high-quality epitaxial graphene

Weak localization is studied in two high-quality epitaxial graphene samples grown on silicon-faced 6H-SiC substrates. Following the methodology of Kozikov et al (2010 Phys. Rev. B 82 075424), we measured the temperature dependence of carrier conductivity at zero and low magnetic (B) fields. In both samples, a logarithmic temperature dependence of the carrier conductivity was observed at Bxa0=xa00 and its amplitude was larger than predicted by a single-particle model, suggesting that electron–electron interaction plays an important role in electron transport in epitaxial graphene films.