Thomas Feurer

Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

Semi-transparent perovskite solar cells are highly attractive for a wide range of applications, such as bifacial and tandem solar cells; however, the power conversion efficiency of semi-transparent devices still lags behind due to missing suitable transparent rear electrode or deposition process. Here we report a low-temperature process for efficient semi-transparent planar perovskite solar cells. A hybrid thermal evaporation–spin coating technique is developed to allow the introduction of PCBM in regular device configuration, which facilitates the growth of high-quality absorber, resulting in hysteresis-free devices. We employ high-mobility hydrogenated indium oxide as transparent rear electrode by room-temperature radio-frequency magnetron sputtering, yielding a semi-transparent solar cell with steady-state efficiency of 14.2% along with 72% average transmittance in the near-infrared region. With such semi-transparent devices, we show a substantial power enhancement when operating as bifacial solar cell, and in combination with low-bandgap copper indium gallium diselenide we further demonstrate 20.5% efficiency in four-terminal tandem configuration.

High-Efficiency Polycrystalline Thin Film Tandem Solar Cells

A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

Flexible NIR-transparent perovskite solar cells for all-thin-film tandem photovoltaic devices

The possibility of growing perovskite solar cells on flexible substrates can be seen as an exciting opportunity, allowing high throughput roll-to-roll manufacturing with a low embodied energy, and creating new applications in buildings, vehicles, portable electronics and internet-of-things based devices. Flexible perovskite solar cells have previously been developed on polymer substrates such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) which are vulnerable to the ingress of moisture. Here we report the development of flexible perovskite solar cells grown on a typical transparent front sheet which is generally used to encapsulate flexible Cu(In,Ga)Se2 (CIGS) solar cells. This type of substrate displays an ultra-low water vapor transmission rate and good UV blocking properties. Perovskite solar cells, grown on such flexible front sheets coated with a highly transparent conducting ZnO:Al (AZO) electrode and vacuum processed ZnO/C60 electron transport multilayer, yield 13.2% and 10.9% stabilized efficiencies for areas of 0.15 cm2 and 1.03 cm2, respectively. The substitution of an opaque rear contact with the transparent electrode enables the realization of flexible NIR-transparent perovskite solar cells with efficiencies above 12%. These devices display an average transmittance of 78% between 800 and 1000 nm and enable the development of 4-terminal polycrystalline all-thin-film flexible perovskite/CIGS tandem devices. In a first proof of concept 18.2% efficiency is obtained.

Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices.

Quantum efficiency measurements of state of the art Cu(In,Ga)Se2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al2 O3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu2 (Zn,Sn)(S,Se)4 .

Single-graded CIGS with narrow bandgap for tandem solar cells

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

Abstract Cu(In,Ga)Se2 -based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se2 solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se2 does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances.

Compositionally Graded Absorber for Efficient and Stable Near‐Infrared‐Transparent Perovskite Solar Cells

Abstract Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se2, CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long‐term heat/light soaking has not been demonstrated. In this study, a facile partial ion‐exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near‐infrared‐transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se2 bottom cell. Non‐encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion‐exchange to design graded perovskite solar cells with improved efficiency and stability.

Chromium nitride as a stable cathode current collector for all-solid-state thin film Li-ion batteries

The development of highly oxidation resistant current collectors which are inert against lithium at elevated temperatures (>600 °C) and high potentials (3–5 V vs. Li+/Li) is required for the realization of high voltage, thin film, all-solid-state Li-ion batteries. This is due to the method of building such batteries using layer by layer deposition, requiring the first layer to remain stable during all subsequent processing steps. A new cathode current collector based on Cr2N thin films and prepared by reactive pulsed DC sputtering at 300 °C is reported here. By varying the nitrogen partial pressure in the reactor several CrxN thin film alloys are prepared and their microstructural and electrical properties are characterized. We demonstrate that the alloy with an estimated composition of Cr2.1N exhibits a relatively low sheet resistance of 2.6 Ω sq−1 for a ∼500 nm film, high oxidation resistance and no reaction with lithium up to 600 °C. Furthermore, we observed electrochemical stability in the potential range 3–5 V vs. Li+/Li. Finally, as a proof of concept the electrochemical behavior of cells using Cr2.1N thin films as a current collector for the high voltage cathode LiMn1.5Ni0.5O4 is presented.