Benjamin Bissig

Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

Semi-transparent perovskite solar cells are highly attractive for a wide range of applications, such as bifacial and tandem solar cells; however, the power conversion efficiency of semi-transparent devices still lags behind due to missing suitable transparent rear electrode or deposition process. Here we report a low-temperature process for efficient semi-transparent planar perovskite solar cells. A hybrid thermal evaporation–spin coating technique is developed to allow the introduction of PCBM in regular device configuration, which facilitates the growth of high-quality absorber, resulting in hysteresis-free devices. We employ high-mobility hydrogenated indium oxide as transparent rear electrode by room-temperature radio-frequency magnetron sputtering, yielding a semi-transparent solar cell with steady-state efficiency of 14.2% along with 72% average transmittance in the near-infrared region. With such semi-transparent devices, we show a substantial power enhancement when operating as bifacial solar cell, and in combination with low-bandgap copper indium gallium diselenide we further demonstrate 20.5% efficiency in four-terminal tandem configuration.

Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells

Thin film solar cells with a Cu(In,Ga)Se2 (CIGS) absorber layer achieved efficiencies above 20%. In order to achieve such high performance the absorber layer of the device has to be doped with alkaline material. One possibility to incorporate alkaline material is a post deposition treatment (PDT), where a thin layer of NaF and/or KF is deposited onto the completely grown CIGS layer. In this paper we discuss the effects of PDT with different alkaline elements (Na and K) on the electronic properties of CIGS solar cells. We demonstrate that whereas Na is more effective in increasing the hole concentration in CIGS, K significantly improves the pn-junction quality. The beneficial role of K in improving the PV performance is attributed to reduced recombination at the CdS/CIGS interface, as revealed by temperature dependent J-V measurements, due to a stronger electronically inverted CIGS surface region. Computer simulations with the software SCAPS are used to verify this model. Furthermore, we show that PDT with either KF or NaF has also a distinct influence on other electronic properties of the device such as the position of the N1 signal in admittance spectroscopy and the roll-over of the J-V curve at low temperature. In view of the presented results we conclude that a model based on a secondary diode at the CIGS/Mo interface can best explain these features.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Defect formation in Cu(In,Ga)Se2 thin films due to the presence of potassium during growth by low temperature co-evaporation process

Doping the Cu(In,Ga)Se2 (CIGS) absorber layer with alkaline metals is necessary to process high efficiency solar cells. When growth of CIGS solar cells is performed on soda-lime glass (SLG), the alkaline elements naturally diffuse from the substrate into the absorber layer. On the other hand, when CIGS is grown on alkaline free substrates, the alkaline metals have to be added from another source. In the past, Na was believed to be the most important dopant of the alkaline elements, even though K was also observed to diffuse into CIGS from the SLG. Recently, the beneficial effect of a post deposition treatment with KF was pointed out and enabled the production of a 20.4% CIGS solar cell grown at low substrate temperature (<500 °C). However, possible negative effects of the presence or addition of the alkaline impurities during the low temperature growth process were observed for Na, but were not investigated for K so far. In this study, we investigate in detail the role of K on the defect formation in CIGS...

Cu(In,Ga)Se

Thin-film solar cells based on the chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber material show high potential for further cost reduction in photovoltaics. Compared with polycrystalline silicon (p-Si) wafer technology, thin-film technology has inherent advantages due to lower energy and material consumption during production but has typically shown lower conversion efficiency. However, in the past two years, new scientific insights have enabled the processing of CIGS solar cells with efficiencies up to 21%, surpassing the p-Si wafer value of 20.4% efficiency for the first time. Now several research groups report record cell efficiency values above 20% using different deposition processes and buffer layers. The presence of potassium was observed in many CIGS devices over the years, but it is only very recently that differences with Na have started being taken into full consideration for device processing and that K was added intentionally to the absorber. In this study, previous reports showing the presence of potassium are reviewed and discussed in more detail. Furthermore, on a scale-up perspective, additional progress has also taken place with CIGS minimodules achieving efficiency up to almost 19% and where further increase can be expected in the near future with the improvements induced by the use of potassium. This shows that the CIGS technology is continuously progressing not only on scientific level but on technological level as well.

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Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Thin-Film Solar Cells and Modules—A Boost in Efficiency Due to Potassium

High mobility hydrogenated indium oxide is investigated as a transparent contact for thin film Cu(In,Ga)Se2 (CIGS) solar cells. Hydrogen doping of In2O3 thin films is achieved by injection of H2O water vapor or H2 gas during the sputter process. As-deposited amorphous In2O3:H films exhibit a high electron mobility of ∼50 cm2/Vs at room temperature. A bulk hydrogen concentration of ∼4 at. % was measured for both optimized H2O and H2-processed films, although the H2O-derived film exhibits a doping gradient as detected by elastic recoil detection analysis. Amorphous IOH films are implemented as front contacts in CIGS based solar cells, and their performance is compared with the reference ZnO:Al electrodes. The most significant feature of IOH containing devices is an enhanced open circuit voltage (VOC) of ∼20 mV regardless of the doping approach, whereas the short circuit current and fill factor remain the same for the H2O case or slightly decrease for H2. The overall power conversion efficiency is improved f...

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se2 (CIGS) solar cells, leading to an open circuit voltage VOC enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced VOC. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase i...

Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se2 solar cells

The possibility of growing perovskite solar cells on flexible substrates can be seen as an exciting opportunity, allowing high throughput roll-to-roll manufacturing with a low embodied energy, and creating new applications in buildings, vehicles, portable electronics and internet-of-things based devices. Flexible perovskite solar cells have previously been developed on polymer substrates such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) which are vulnerable to the ingress of moisture. Here we report the development of flexible perovskite solar cells grown on a typical transparent front sheet which is generally used to encapsulate flexible Cu(In,Ga)Se2 (CIGS) solar cells. This type of substrate displays an ultra-low water vapor transmission rate and good UV blocking properties. Perovskite solar cells, grown on such flexible front sheets coated with a highly transparent conducting ZnO:Al (AZO) electrode and vacuum processed ZnO/C60 electron transport multilayer, yield 13.2% and 10.9% stabilized efficiencies for areas of 0.15 cm2 and 1.03 cm2, respectively. The substitution of an opaque rear contact with the transparent electrode enables the realization of flexible NIR-transparent perovskite solar cells with efficiencies above 12%. These devices display an average transmittance of 78% between 800 and 1000 nm and enable the development of 4-terminal polycrystalline all-thin-film flexible perovskite/CIGS tandem devices. In a first proof of concept 18.2% efficiency is obtained.

Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes

Electron transport in Sb-doped SnO2 (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm2 V−1 s−1 to 6 cm2 V−1 s−1 when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10−3 Ω cm corresponding to the mobility of 12 cm2 V−1 s−1 which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO2 films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline ...