Thomas Liebermann

A 1V fully integrated CMOS transformer based mixer with 5.5dB gain, 14.5dB SSB noise figure and 0dBm input IP3

A fully integrated low voltage mixer topology is presented. The problem of stacking input-, cascade- and switching-transistors within 1 V supply voltage is solved by inserting a transformer, optimized for high coupling and high-self resonance frequency. A fully integrated test chip aiming at UMTS applications around 2 GHz to demonstrate the feasibility was manufactured in INFINEON low-cost 0.13 /spl mu/m 6 metal standard CMOS process. The single-ended mixer, including the on chip resistive 50 /spl Omega/ termination, features a gain of 5.5 dB, a SSB noise figure of 14.5 dB, an input 1 dB compression point of -10 dBm consuming 40 mW at a power supply voltage of 1 V. The mixer 3 dB-bandwidth ranges from 1.3 GHz up to 4.1 GHz.

A 0.9V Low Voltage 0.13W Power Amplifier with 37% PAE at 1 GHz in Standard CMOS

This work presents the design of a monolithically integrated CMOS RF power amplifier for 0.9 - 1.1GHz operating from one single power supply voltage of 0.9V to 1.65V. The amplifier was processed in a 2.5V, 0.25¿m, 4 metal layer standard CMOS process of Infineon with fT = 40GHz. At 0.9V supply voltage an output power of 0.13W (21.2dBm) is achieved with a power added efficiency (PAE) of 37% at 1GHz. At 1.65V supply voltage, the output power is 0.41W (26.2dBm) with a PAE of 31.2% at 1GHz.