Thomas Szkopek

Graphene Epitaxy by Chemical Vapor Deposition on SiC

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Probing Charge Transfer at Surfaces Using Graphene Transistors

Graphene field effect transistors (FETs) are extremely sensitive to gas exposure. Charge transfer doping of graphene FETs by atmospheric gas is ubiquitous but not yet understood. We have used graphene FETs to probe minute changes in electrochemical potential during high-purity gas exposure experiments. Our study shows quantitatively that electrochemistry involving adsorbed water, graphene, and the substrate is responsible for doping. We not only identify the water/oxygen redox couple as the underlying mechanism but also capture the kinetics of this reaction. The graphene FET is highlighted here as an extremely sensitive potentiometer for probing electrochemical reactions at interfaces, arising from the unique density of states of graphene. This work establishes a fundamental basis on which new electrochemical nanoprobes and gas sensors can be developed with graphene.

Plasmonic interconnects versus conventional interconnects: a comparison of latency, crosstalk and energy costs.

The continued scaling of integrated circuits will require advances in intra-chip interconnect technology to minimize delay, density of energy dissipation and cross-talk. We present the first quantitative comparison between the performance of metal wire interconnects, operated in the traditional manner by electric charge and discharge, versus the performance of metal wires operated as surface plasmon waveguides. Surface plasmon wire waveguides have the potential to reduce signal delay, but the high confinement required for low cross-talk amongst high density plasmon wire interconnects significantly increases energy dissipation per transmitted bit, above and beyond that required for electric charge/discharge interconnects at the same density.

Graphene field effect transistors with parylene gate dielectric

We report the fabrication and characterization of graphene field effect transistors with parylene back gate and exposed graphene top surface. A back gate stack of 168 nm parylene on 94 nm thermal silicon oxide permitted optical reflection microscopy to be used for identifying exfoliated graphene flakes. Room temperature mobilities of 10 000 cm2/Vs at 1012/cm2 electron/hole densities were observed in electrically contacted graphene. Parylene gated devices exhibited stable neutrality point gate voltage under ambient conditions and less hysteresis than that observed in graphene flakes directly exfoliated on silicon oxide.

110 GHz measurement of large-area graphene integrated in low-loss microwave structures

We report high-frequency scattering parameter measurement of large-area monolayer graphene integrated on low-loss quartz substrates. High-quality graphene was grown by chemical vapour deposition on copper, chemically hole doped, and transferred to quartz. Microwave measurements were performed from 0.01 to 110 GHz. Simple microwave models were used to extract graphene impedance parameters. We find that contact resistance is effectively shunted above 3 GHz. Atomically thin large area graphene behaves as a wideband resistor with negligible kinetic inductance and negligible skin effect.

Counting graphene layers on glass via optical reflection microscopy

We show that optical reflection microscopy is a reliable method to simultaneously locate and count graphene layers deposited on bulk, transparent substrates such as soda-lime glass. The visible contrast in optical reflection versus graphene layer number is resolvable on bulk substrates. A simple Fresnel theory based on the universal optical conductance of graphene layers accurately models optical reflection images taken at a wavelength of 550±5 nm. We directly count one to nine layers of graphene using reflection microscopy.

Two-dimensional magnetotransport in a black phosphorus naked quantum well

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated to atomic layer thickness. Unlike metallic graphite and semi-metallic graphene, bP is a semiconductor in both bulk and few-layer form. Here we fabricate bP-naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from 6±1 nm to 47±1 nm. Using a polymer encapsulant, we suppress bP oxidation and observe field effect mobilities up to 900 cm2 V−1 s−1 and on/off current ratios exceeding 105. Shubnikov-de Haas oscillations observed in magnetic fields up to 35 T reveal a 2D hole gas with Schrödinger fermion character in a surface accumulation layer. Our work demonstrates that 2D electronic structure and 2D atomic structure are independent. 2D carrier confinement can be achieved without approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.

Faraday rotation in magnetically biased graphene at microwave frequencies

Faraday rotation is experimentally observed at microwave frequencies in a large-area graphene sheet biased with a static magnetic field, and interrogated by polarized fields in a hollow circular waveguide. A Faraday rotation of up to 1.5° and an isolation of more than 30 dB is observed, suggesting possible applications to graphene based isolators, circulators, and other non-reciprocal devices. An analytic model is developed for the scattering parameters of the measured structure. The model shows excellent agreement with the measurements and is used to extract the graphene conductivity, carrier density, and mobility.

Optical reflection and transmission properties of exfoliated graphite from a graphene monolayer to several hundred graphene layers.

The optical reflection contrast and optical transmission contrast of graphitic films on glass ranging in thickness from a monolayer to the limit of bulk graphite have been experimentally measured. For samples with more than 10 graphene layers where optical contrast quantization becomes difficult to observe, atomic force microscopy was used to measure the sample thickness. The visible optical reflection and transmission of thin graphitic films is found to depend strongly on the real component of the optical conductance per graphene layer, and comparatively weakly on the imaginary component of optical conductance. This observation in part explains the significant variation in the refractive index of graphene and graphite reported in the literature to date. Spectroscopic measurements reveal a strong dispersion in the optical conductance of even a 10 layer film, consistent with an imaginary conductance arising from virtual transitions at the band edges of the pi and sigma bands at the M and Gamma points, respectively.

Threshold error penalty for fault-tolerant quantum computation with nearest neighbor communication

The error threshold for fault-tolerant quantum computation with concatenated encoding of qubits is penalized by internal communication overhead. Many quantum computation proposals rely on nearest neighbor communication, which requires excess gate operations. For a qubit stripe with a width of L+1 physical qubits implementing L levels of concatenation, we find that the error threshold of 2.1/spl times/10/sup -5/ without any communication burden is reduced to 1.2/spl times/10/sup -7/ when gate errors are the dominant source of error. This /spl sim/175/spl times/ penalty in error threshold translates to an /spl sim/13/spl times/ penalty in the amplitude and timing of gate operation control pulses.