Jonathan Guillemette

Probing Charge Transfer at Surfaces Using Graphene Transistors

Graphene field effect transistors (FETs) are extremely sensitive to gas exposure. Charge transfer doping of graphene FETs by atmospheric gas is ubiquitous but not yet understood. We have used graphene FETs to probe minute changes in electrochemical potential during high-purity gas exposure experiments. Our study shows quantitatively that electrochemistry involving adsorbed water, graphene, and the substrate is responsible for doping. We not only identify the water/oxygen redox couple as the underlying mechanism but also capture the kinetics of this reaction. The graphene FET is highlighted here as an extremely sensitive potentiometer for probing electrochemical reactions at interfaces, arising from the unique density of states of graphene. This work establishes a fundamental basis on which new electrochemical nanoprobes and gas sensors can be developed with graphene.

Graphene field effect transistors with parylene gate dielectric

We report the fabrication and characterization of graphene field effect transistors with parylene back gate and exposed graphene top surface. A back gate stack of 168 nm parylene on 94 nm thermal silicon oxide permitted optical reflection microscopy to be used for identifying exfoliated graphene flakes. Room temperature mobilities of 10 000 cm2/Vs at 1012/cm2 electron/hole densities were observed in electrically contacted graphene. Parylene gated devices exhibited stable neutrality point gate voltage under ambient conditions and less hysteresis than that observed in graphene flakes directly exfoliated on silicon oxide.

Quantum hall effect in hydrogenated graphene

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10  cm2/V·s and corresponding Ioffe-Regel disorder parameter (k(F)λ)(-1) ≫ 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e2. The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e2 at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine

We demonstrate that large-area, graphene field effect transistors with a passive parylene substrate and a polyethyleneimine functional layer have enhanced sensitivity to CO2 gas exposure. The electron doping of graphene, caused by protonated amine groups within the polyethyleneimine, is modulated by the formation of negatively charged species generated by CO2 adsorption. The charge doping mechanism is general, and quantitative doping density changes can be determined from the graphene field effect transistor characteristics.

Measurement of topological Berry phase in highly disordered graphene

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C

Magnetic refrigeration with paramagnetic semiconductors at cryogenic temperatures

\approx 0.1\%

Chemical vapor deposition synthesis of graphene on copper with methanol, ethanol, and propanol precursors

. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.

Method and system for magnetic semiconductor solid state cooling

We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of various semiconductor systems. Performance comparable to that of the commonly used paramagnetic salt cerous magnesium nitrate hydrate is predicted.