Farzaneh Mahvash

Functionalized CVD monolayer graphene for label-free impedimetric biosensing

Recent advances in large area graphene growth have led to many applications in different areas. In the present study, chemical vapor deposited (CVD) monolayer graphene supported on glass substrate was examined as electrode material for electrochemical biosensing applications. We report a facile strategy for covalent functionalization of CVD monolayer graphene by electrochemical reduction of carboxyphenyl diazonium salt prepared in situ in acidic aqueous solution. The carboxyphenyl-modified graphene is characterized using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM), as well as electrochemical impedance spectroscopy (EIS). We also show that the number of grafted carboxyphenyl groups on the graphene surface can be controlled by the number of cyclic voltammetry (CV) scans used for electrografting. We further present the fabrication and characterization of an immunosensor based on immobilization of ovalbumin antibody on the graphene surface after the activation of the grafted carboxylic groups via EDC/NHS chemistry. The binding between the surface-immobilized antibodies and ovalbumin was then monitored using Faradaic EIS in [Fe(CN)6]3−/4− solution. The percentage change of charge transfer resistance (Rct) after binding exhibited a linear dependence for ovalbumin concentrations ranging from 1.0 pg·mL−1 to 100 ng·mL−1, with a detection limit of 0.9 pg·mL−1. Our results indicate good sensitivity of the developed functionalized CVD graphene platform, paving the way for using CVD monolayer graphene in a variety of electrochemical biosensing devices.

Space-charge limited transport in large-area monolayer hexagonal boron nitride.

Hexagonal boron nitride (hBN) is a wide-gap material that has attracted significant attention as an ideal dielectric substrate for 2D crystal heterostructures. We report here the first observation of in-plane charge transport in large-area monolayer hBN, grown by chemical vapor deposition. The quadratic scaling of current with voltage at high bias corresponds to a space-charge limited conduction mechanism, with a room-temperature mobility reaching up to 0.01 cm(2)/(V s) at electric fields up to 100 kV/cm in the absence of dielectric breakdown. The observation of in-plane charge transport highlights the semiconducting nature of monolayer hBN, and identifies hBN as a wide-gap 2D crystal capable of supporting charge transport at high field. Future exploration of charge transport in hBN is motivated by the fundamental study of UV optoelectronics and the massive Dirac fermion spectrum of hBN.

Quantum hall effect in hydrogenated graphene

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10  cm2/V·s and corresponding Ioffe-Regel disorder parameter (k(F)λ)(-1) ≫ 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e2. The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e2 at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit

We have fabricated and characterized large area graphene ion sensitive field effect transistors (ISFETs) with tantalum pentoxide sensing layers and demonstrated pH sensitivities approaching the Nernstian limit. Low temperature atomic layer deposition was used to deposit tantalum pentoxide atop large area graphene ISFETs. The charge neutrality point of graphene, inferred from quantum capacitance or channel conductance, was used to monitor surface potential in the presence of an electrolyte with varying pH. Bare graphene ISFETs exhibit negligible response, while graphene ISFETs with tantalum pentoxide sensing layers show increased sensitivity reaching up to 55 mV/pH over pH 3 through pH 8. Applying the Bergveld model, which accounts for site binding and a Guoy-Chapman-Stern picture of the surface-electrolyte interface, the increased pH sensitivity can be attributed to an increased buffer capacity reaching up to 1014 sites/cm2. ISFET response was found to be stable to better than 0.05 pH units over the cours...

Field effect tuning of microwave Faraday rotation and isolation with large-area graphene

We have demonstrated field effect tuning of microwave frequency Faraday rotation in magnetically biased large-area graphene in a hollow circular waveguide isolator geometry. Oxidized intrinsic silicon was used as a microwave transparent back-gate for large-area graphene devices. A 26 dB modulation of isolation in the K-band was achieved with a gate voltage modulation of 10 V corresponding to a carrier density modulation of 7×1011/cm2. We have developed a simple analytical model for transmission and isolation of the structure. Field effect modulation of Faraday rotation can be extended to other two dimensional electronic systems and is anticipated to be useful for gate voltage controlled isolators, circulators, and other non-reciprocal devices.

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

Measurement of topological Berry phase in highly disordered graphene

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C

Carbon nanotube electrodes in organic transistors

\approx 0.1\%

Sensitive Precise pH Measurement with Large-Area Graphene Field-Effect Transistors at the Quantum-Capacitance Limit

. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.