Tihomir Takov

Temperature influence on Hall effect sensors characteristics

Horizontal Hall microsensors, comprising a silicon substrate and four contacts, providing two supply inputs and two differential outputs, are designed and characterized. This paper presents the temperature influence on the residual offset and also on the voltage related sensitivities. The measured voltage related sensitivity is 152 mV/VT. The sensors are tested at 125°C, 85°C, 50°C, 25°C, 0°C, -20°C and -40°C. An offset compensation method is used in order to achieve residual offset in the micro scale (the highest achieved value offset is 6.97 μV).

Design and investigation of Hall effect micro-sensors

The requirements for precision integrated sensors are constantly increasing and the new techniques in the circuit design are of great importance. In this paper a new technology approved Hall effect microsensors are presented, which experimentally prove improved sensors characteristics.

Back-bias voltage influence on Hall-effect microsensors

In this paper we have examined the back-bias effect and its influence on Hall microsensors behavior, which is manufactured on 0,18 μm CMOS technology. Then the sensors parametric reliability was tested at the temperature range of -40°C to +150°C. The purpose of the constructed Hall cell is to improve sensors characteristics, achieving high sensitivity with minimal parasitic offset effects.