Tilman Schimpke

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Nitride-based three-dimensional core-shell nanorods (NRs) are promising candidates for the achievement of highly efficient optoelectronic devices. For a detailed understanding of the complex core-shell layer structure of InGaN/GaN NRs, a systematic determination and correlation of the structural, compositional, and optical properties on a nanometer-scale is essential. In particular, the combination of low-temperature cathodoluminescence (CL) spectroscopy directly performed in a scanning transmission electron microscope (STEM), and quantitative high-angle annular dark field imaging enables a comprehensive study of the nanoscopic attributes of the individual shell layers. The investigated InGaN/GaN core-shell NRs, which were grown by metal-organic vapor-phase epitaxy using selective-area growth exhibit an exceptionally low density of extended defects. Using highly spatially resolved CL mapping of single NRs performed in cross-section, we give a direct insight into the optical properties of the individual core-shell layers. Most interesting, we observe a red shift of the InGaN single quantum well from 410 to 471 nm along the nonpolar side wall. Quantitative STEM analysis of the active region reveals an increasing thickness of the single quantum well (SQW) from 6 to 13 nm, accompanied by a slight increase of the indium concentration along the nonpolar side wall from 11% to 13%. Both effects, the increased quantum-well thickness and the higher indium incorporation, are responsible for the observed energetic shift of the InGaN SQW luminescence. Furthermore, compositional mappings of the InGaN quantum well reveal the formation of locally indium rich regions with several nanometers in size, leading to potential fluctuations in the InGaN SQW energy landscape. This is directly evidenced by nanometer-scale resolved CL mappings that show strong localization effects of the excitonic SQW emission.

Red-Emitting ( nm) In 0.51 Ga 0.49 N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon

We have investigated the properties of In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes (LEDs) epitaxially grown on silicon substrates by plasma-assisted molecular beam epitaxy. The radiative efficiency of the nanowire ensemble, obtained from the temperature-dependent photoluminescence measurements, under optimized growth conditions is 43%, which increases to 55% after parylene passivation. From high resolution transmission electron microscopy, it is evident that there is significant coalescence between nanowires when the areal density approaches 1011 cm-2. We have identified and characterized deep level electron and hole traps in the GaN nanowires and it is found that the trap densities increase with nanowire density, or with the degree of coalescence. It is therefore believed that the deep levels originate from dislocations and stacking faults arising from nanowire coalescence. The best output characteristics are measured in a LED having a nanowire density of 2 × 1010 cm-2, which exhibits a maximum internal quantum efficiency of ~55% at an injection level of 10 A/cm2. It is seen that the maximum efficiency would increase to 60% in the absence of deep level traps.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP–), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm−3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Red-emitting (λ = 610nm) In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes on silicon

We have investigated the properties of In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes (LEDs) epitaxially grown on silicon substrates by plasma-assisted molecular beam epitaxy. The radiative efficiency of the nanowire ensemble, obtained from the temperature-dependent photoluminescence measurements, under optimized growth conditions is 43%, which increases to 55% after parylene passivation. From high resolution transmission electron microscopy, it is evident that there is significant coalescence between nanowires when the areal density approaches 1011 cm-2. We have identified and characterized deep level electron and hole traps in the GaN nanowires and it is found that the trap densities increase with nanowire density, or with the degree of coalescence. It is therefore believed that the deep levels originate from dislocations and stacking faults arising from nanowire coalescence. The best output characteristics are measured in a LED having a nanowire density of 2 × 1010 cm-2, which exhibits a maximum internal quantum efficiency of ~55% at an injection level of 10 A/cm2. It is seen that the maximum efficiency would increase to 60% in the absence of deep level traps.

Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting

We investigate, via temperature and excitation density dependent quasi-resonant confocal micro-photoluminescence, the optical properties and internal quantum efficiency (IQE) of InGaN/GaN single quantum wells (QWs) on Ga-polar GaN microrods selectively grown by continuous flow metal organic vapor phase epitaxy on patterned SiO2/n-GaN/sapphire template. Seven samples were grown with different growth parameters for the InGaN/GaN QW. The homogeneity of their optical properties is analyzed by mappings along the m-plane facet of the microrods in order to get insight on the growth mechanisms of the shell. Excitation density dependent measurements show that the IQE is affected by the high doping level of the core, which is required to grow such high aspect-ratio structures. Local IQEs between 15±1 % near the tip and 44±5 % near the base of microrods are estimated from measurements at room and low temperature. By comparison with results reported on planar c-plane QWs, we conclude that the radiative recombination ...

Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

We investigate the optical emission properties of the active InGaN shell of high aspect-ratio InGaN/GaN core-shell microrods (μRods) by confocal quasi-resonant polarization-resolved and excitation density dependent micro-photoluminescence (μPL). The active shell, multiple thin InGaN/GaN quantum wells (MQWs), was deposited on GaN μRods selectively grown by metal organic vapor phase epitaxy on patterned SiO2/n-GaN/sapphire template. High spatial resolution mappings reveal a very homogeneous emission intensity along the whole μRods including the tip despite a red-shift of 30 nm from the base to the tip along the 8.6 μm-long m-plane sidewalls. Looking at the Fabry-Perot interference fringes superimposed on the μPL spectra, we get structural information on the μRods. A high degree of linear polarization (DLP) of 0.6–0.66 is measured on the lower half of the m-plane side facets with a slight decrease toward the tip. We observe the typical drop of the DLP with an excitation density caused by degenerate filling o...

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

Today’s InGaN-based white LEDs still suffer from a significant efficiency reduction at elevated current densities, the so-called “Droop”. Core-shell microrods, with quantum wells (QWs) covering their entire surface, enable a tremendous increase in active area scaling with the rod’s aspect ratio. Enlarging the active area on a given footprint area is a viable and cost effective route to mitigate the droop by effectively reducing the local current density. Microrods were grown in a large volume metal-organic vapor phase epitaxy (MOVPE) reactor on GaN-on-sapphire substrates with a thin, patterned SiO2 mask for position control. Out of the mask openings, pencil-shaped n-doped GaN microrod cores were grown under conditions favoring 3D growth. In a second growth step, these cores are covered with a shell containing a quantum well and a p-n junction to form LED structures. The emission from the QWs on the different facets was studied using resonant temperature-dependent photoluminescence (PL) and cathodoluminescence (CL) measurements. The crystal quality of the structures was investigated by transmission electron microscopy (TEM) showing the absence of extended defects like threading dislocations in the 3D core. In order to fabricate LED chips, dedicated processes were developed to accommodate for the special requirements of the 3D geometry. The electrical and optical properties of ensembles of tens of thousands microrods connected in parallel are discussed.

Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence

The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifetimes. At 300 K, τnr decreases from 500 at the bottom of the rod to 150 ps at its top. This variation results from an increased In-content in the upper part of the rod that causes a higher density of point defects. We further observe that thanks to the use of nonpolar m-plane growth, τr remains below 1.5 ns up to room temperature even with a thick active layer, which is promising for pushing the onset of the efficiency droop to higher current densities.The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to 300 K enables us to decompose radiative (τr) and non-radiative (τnr) lifetimes. At 300 K, τnr decreases from 500 at the bottom of the rod to 150 ps at its top. This variation results from an increased In-content in the upper part of the rod that causes a higher density of point defects. We further observe that thanks to the use of nonpolar m-plane growth, τr remains below 1.5 ns up to room temperature even with a thick active layer, which is promising for pushing the onset of the efficiency droop to higher current densities.

Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures

1. Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany 2. Institute of Theoretical Physics, University of Bremen, 28359 Bremen, Germany 3. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, 70569 Stuttgart, Germany, 4. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany 5. OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany