Timothy A. Rost

The effect of fluorine on MOSFET channel length

The effect of fluorine on MOS device channel length has been evaluated. Fluorine has been introduced into the transistor by self-aligned ion implantation after the lightly doped drain (LDD) implant. The impact of fluorine in the LDD region, and its effect on the electrically determined channel length (L/sub eff/), has been examined. Measurements taken from 0.6- mu m LDD MOSFETs show a significant dependence of the L/sub eff/ on fluorine implant dose. The n/sup +/ resistor also shows more width reduction compared to unfluorinated samples. The decrease in channel length reduction by adding fluorine in the LDD region may yield way to relieve short-channel effects for the continuous scaling of CMOS devices into the deep-submicrometer region.<<ETX>>

The impact of fluorine on CMOS channel length and shallow junction formation

The effects of fluorine on shallow junction formation and CMOS channel length are evaluated in this report. In this study fluorine is implanted into the device LDD region. It was found that fluorine can significantly decrease the device channel length reduction and improve short channel behavior. It was also shown that fluorine can suppress dopant diffusion to form shallower junctions. These results may provide a new approach for relaxing thermal budget constraints and reducing short channel effects for scaling CMOS technologies to smaller dimensions.<<ETX>>