Ting-Fung Chung

Electrically tunable damping of plasmonic resonances with graphene.

Dynamic switching of a plasmonic resonance may find numerous applications in subwavelength optoelectronics, spectroscopy, and sensing. Graphene shows a highly tunable carrier concentration under electrostatic gating, and this could provide an effective route to achieving electrical control of the plasmonic resonance. In this Letter, we demonstrate electrical control of a plasmonic resonance at infrared frequencies using large-area graphene. Plasmonic structures fabricated on graphene enhance the interaction of the incident optical field with the graphene sheet, and the impact of graphene is much stronger at mid-infrared wavelengths. Full-wave simulations, where graphene is modeled as a 1 nm thick effective medium, show excellent agreement with experimental results.

Electrical Modulation of Fano Resonance in Plasmonic Nanostructures Using Graphene

Pauli blocking of interband transistions gives rise to tunable optical properties in single layer graphene (SLG). This effect is exploited in a graphene-nanoantenna hybrid device where Fano resonant plasmonic nanostructures are fabricated on top of a graphene sheet. The use of Fano resonant elements enhances the interaction of incident radiation with the graphene sheet and enables efficient electrical modulation of the plasmonic resonance. We observe electrically controlled damping in the Fano resonances occurring at approximately 2 μm, and the results are verified by full-wave 3D finite-element simulations. Our approach can be used for development of next generation of tunable plasmonic and hybrid nanophotonic devices.

Nanoscale strainability of graphene by laser shock-induced three-dimensional shaping.

Graphene has many promising physical properties. It has been discovered that local strain in a graphene sheet can alter its conducting properties and transport gaps. It is of great importance to develop scalable strain engineering techniques to control the local strains in graphene and understand the limit of the strains. Here, we present a scalable manufacturing process to generate three-dimensional (3D) nanostructures and thus induce local strains in the graphene sheet. This process utilizes laser-induced shock pressure to generate 3D tunable straining in the graphene sheet. The size dependent straining limit of the graphene and the critical breaking pressure are both studied. It is found that the graphene film can be formed to a circular mold (∼50 nm in diameter) with an aspect ratio of 0.25 and strain of 12%, and the critical breaking pressure is 1.77 GPa. These values were found to be decreasing with the increase of mold size. The local straining and breaking of graphene film are verified by Raman spectra. Large scale processing of the graphene sheet into nanoscale patterns is presented. The process could be scaled up to roll-to-roll process by changing laser beam size and scanning speed. The presented laser shock straining approach is a fast, tunable, and low-cost technique to realize strain engineering of graphene for its applications in nanoelectrical devices.

Enhanced graphene photodetector with fractal metasurface

We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure.

Highly sensitive transient absorption imaging of graphene and graphene oxide in living cells and circulating blood.

We report a transient absorption (TA) imaging method for fast visualization and quantitative layer analysis of graphene and GO. Forward and backward imaging of graphene on various substrates under ambient condition was imaged with a speed of 2 μs per pixel. The TA intensity linearly increased with the layer number of graphene. Real-time TA imaging of GO in vitro with capability of quantitative analysis of intracellular concentration and ex vivo in circulating blood were demonstrated. These results suggest that TA microscopy is a valid tool for the study of graphene based materials.

Optical phonons in twisted bilayer graphene with gate-induced asymmetric doping.

Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching on the G Raman band when the carrier density is tuned away from charge neutrality. This G peak splitting is attributed to asymmetric charge doping in the two graphene layers, which reveals individual phonon self-energy renormalization of the two weakly coupled layers of graphene. We estimate the effective interlayer capacitance at low doping density of tBLG using an interlayer screening model. The anomalous intensity quenching of both G peaks is ascribed to the suppression of resonant interband transitions between the two saddle points (van Hove singularities) that are displaced in the momentum space by gate-tuning. In addition, we observe a softening (hardening) of the R Raman band, a superlattice-induced phonon mode in tBLG, in electron (hole) doping. Our results demonstrate that gate modulation can be used to control the optoelectronic and vibrational properties in tBLG devices.

Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene

Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.

Real-Space Imaging of the Tailored Plasmons in Twisted Bilayer Graphene

We report a systematic plasmonic study of twisted bilayer graphene (TBLG)-two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of single-layer graphene. At larger twist angles, the plasmon wavelength of TBLG increases significantly with apparently lower damping. Further analysis and modeling indicate that the observed twist-angle dependence of TBLG plasmons in the Dirac linear regime is mainly due to the Fermi-velocity renormalization, a direct consequence of interlayer electronic coupling. Our work unveils the tailored plasmonic characteristics of TBLG and deepens our understanding of the intriguing nano-optical physics in novel van der Waals coupled two-dimensional materials.

Tuning Fano resonances with graphene

We demonstrate strong electrical control of plasmonic Fano resonances in dolmen structures using tunable interband transitions in graphene. Such graphene-plasmonic hybrid devices can have applications in light modulation and sensing.

Field effect photoconductivity in graphene on undoped semiconductor substrates

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been demonstrated to date using monolayer graphene operating in conjunction with either metals or semiconductors. Most graphene devices are fabricated on doped Si substrates with SiO2 dielectric used for back gating. Here, we demonstrate photodetection in graphene field effect phototransistors fabricated on undoped semiconductor (SiC) substrates. The photodetection mechanism relies on the high sensitivity of the graphene conductivity to the local change in the electric field that can result from the photo-excited charge carriers produced in the back-gated semiconductor substrate. We also modeled the device and simulated its operation using the finite element method to validate the existence of the field-induced photoresponse mechanism and study its properties. Our graphene phototransistor possesses a room-temperature photoresponsivity as high as ~7.4 A/W, which is higher than the required photoresponsivity (1 A/W) in most practical applications. The light power-dependent photocurrent and photoresponsivity can be tuned by the source-drain bias voltage and back-gate voltage. Graphene phototransistors based on this simple and generic architecture can be fabricated by depositing graphene on a variety of undoped substrates, and are attractive for many applications in which photodetection or radiation detection is sought.