Tohru Takamura

Lateral Seeding of Silicon-On-Insulator by Using an Elliptically-Shaped Laser Beam

It has been demonstrated that an elliptically-shaped laser beam with an elliptical ratio of 20 can be successfully used to obtain a melt width as large as 160 µm. We also discuss an interesting experimental result in which the growth length of a single crystal from the seeding region on (100) Si substrates is larger in the scanning direction along than along in a lateral seeding process.

Borophosphosilicate glass flow for solid‐state imager application

A new fabrication process for solid‐state imagers based on the borophosphosilicate glass (BPSG) flow has been developed. It was found that well‐designed tapered steps can be obtained even at low temperatures with the use of BPSG, which can be cleaned in a hot NH4OH/H2O2/H2O solution. As a result, a solid‐state imager fabricated using the above process is characterized by satisfactory shapes of tapered steps made of intermediate oxide which give complete metal interconnect lines.