Tomohisa Hoshino
Tokyo Electron
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Publication
Featured researches published by Tomohisa Hoshino.
Japanese Journal of Applied Physics | 2002
Vincent Vezin; Yasuhiko Kojima; Tomohisa Hoshino; Gishi Chung
The effects of some additive chemicals on the deposition of copper by chemical vapor deposition with Cu(hfac)tmvs have been investigated. Diethylamine and acetaldehyde had no effect on copper film deposition. Use of triethylsilanol slightly increased the deposition rate, with a maximum at the molecular triethylsilanol/Cu(hfac)tmvs ratio of 0.4%. Water and formic acid markedly increased the deposition rate and the number of reactions per molecule of these additives was determined to be more than one, implying that they act as catalysts. The effects of water and formic acid on copper films purity have also been investigated.
Archive | 2001
Masayoshi Esashi; Shinji Iino; Tomohisa Hoshino
Archive | 2006
Yasuhiko Kojima; Tomohisa Hoshino
Archive | 2001
Tomohisa Hoshino; Vincent Vezin; Gishi Chung
Archive | 2005
Masami Yakabe; Kenichi Kagawa; Tomohisa Hoshino
Archive | 2006
Masami Yakabe; Tomohisa Hoshino
Archive | 2005
Tomohisa Hoshino; Hiroyuki Hashimoto; Muneo Harada
Archive | 2002
Masaki Esashi; Tomohisa Hoshino; Shinji Iino; 智久 星野; 正喜 江刺; 伸治 飯野
Archive | 2011
Kenichi Kagawa; Tomohisa Hoshino; Masami Yakabe
Archive | 2005
Tomohisa Hoshino; Masami Yakabe; 正巳 八壁; 智久 星野
