Tri-Rung Yew

Deposition of polycrystalline {beta}-SiC films on Si substrates at room temperature

Polycrystalline β-SiC, with grain size up to 1500 A, has been room-temperature-deposited on Si substrates by electron cyclotron resonance chemical vapor deposition. Microwave power and the hydrogen carrier gas are the key parameters to lower the deposition temperature. According to the results of the cross-sectional transmission electron microscopy, the grain size appeared to be in the same scale as that deposited at 500 °C while a large amount of plasma-induced defects were observed in the Si substrate for the room-temperature-deposited samples. Hence, a CH4-plasma treatment prior to the β-SiC film growth was adopted, forming a SiC-like interfacial layer to suppress the substrate damages.

A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature

Electron cyclotron resonance chemical vapor deposition (ECR-CVD) of SiC films from silane and methane gas mixtures at low temperature has been investigated using two different carrier gases, namely, argon and hydrogen. The results obtained are compared. The chemical composition and crystalline microstructure were investigated by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (XTEM), respectively. The results indicate that the carrier gases have a greater influence on the film composition and microstructure as compared to the growth parameters like pressure, power and flow ratio. The deposition mechanism which controls the film characteristics is also presented.

Defect reduction of copper BEOL for advanced ULSI interconnect

In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivity is classified into non CMP-related type and CMP-related type. Most of the non-CMP type defects are foreign matter coming from the environment or from the processing residues. They can be effectively removed in a CMP step, as long as they were not trapped in the metal trench. On the other hand, the CMP-related type defects impact the consecutive process and yield significantly. Examples of the killer defects are slurry residues, corrosion, and scratching. Prevention and reduction of defects is discussed. Product yield is greatly improved after the reduction of defectivity.

Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C

Abstract The effects of CH 4 /SiH 4 flow ratio and microwave power on the formation of SiC at 200 °C by electron cyclotron resonance chemical vapor deposition is investigated. When the CH 4 /SiH 4 flow ratio is varied from 0.5 to 10, crystalline phase of films vary from polycrystalline silicon to polycrystalline β-SiC, and finally to amorphous silicon carbide. However, as the microwave power increases from 300 to 1500 W, the film microstructure changes from polycrystalline Si to amorphous SiC, and finally to polycrystalline β-SiC. The deposition mechanism which controls the film characteristics is also presented.