Tsutomu Fujita

2/3-Inch Format MOS Single-Chip Color Imager

A new 2/3-in format MOS single-chip color imager, that includes 384 X 485 elements, has been developed. The device features a low-noise design; high sensitivity (9 nApp/lx for 2855 K W lamp), through employment of a complementary color filter; and wide dynamic range (over 60 dB), through introduction of a p/sup +/-layer in the photodiode and a vertical buffer circuit. The imager also features low aliasing (Moire) and clear color due to the use of a new color filter arrangement and unique multivideo lines. The die measures 10.0 mm X 8.5 mm, which is realized using standard 3-/spl mu/m Si-gate MOSLSI technology. Combining this small size and technological simplicity with on-wafer color filter processing, has made this device suitable for LSI volume production.

Thermal annealing and light irradiation effects on hole and electron drift mobilities of Se93.5As6.5 and Se94.3Ge5.7 films

Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.