Tushar Mandrekar
Applied Materials
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Tushar Mandrekar.
MRS Online Proceedings Library Archive | 2005
Yunlong Li; Zsolt Tokei; Tushar Mandrekar; Bencherki Mebarki; Guido Groeseneken; Karen Maex
In this paper, we investigate the effect of copper diffusion barrier integrity on the leakage behavior and dielectric reliability of copper/micro porous organo-silica-glass (OSG) interconnects. Significant differences in the field dependence of TDDB median-time-to-failure are observed when comparing sub-critical and sealing barriers. Also for the temperature acceleration of TDDB, a significant difference is found which is reflected in the thermal activation energies. With fast voltage ramp measurements, I-V curves of samples with subcritical and sealing barriers are compared before and after constant current stresses. Above 1.4 MV/cm, the dominant leakage mechanism is found to be Frenkel-Poole emission regardless of barrier treatments and stress times. Below 1.4 MV/cm, however, the I-V characteristic is modulated by the barrier integrity, which can be attributed to copper diffusion into the intermetal dielectric.
Multilevel interconnect technology. Conference | 1999
Nitin Khurana; Vikram Pavate; Michael Jackson; Tushar Mandrekar; Z. Fang; Anish Tolia; H. Luo; Jason Li; Rod Mosely; Murali Narasimhan; Mei Chang; Fusen E. Chen
This study will specifically address the results of integrating IMP Ti and MOCVD TiN on a high vacuum system. Results of design of experiments used for process characterization and optimizing device parametric such as contact and via resistance will be discussed, in particular with respect to unlanded via schemes. Finally, Cost of Ownership calculations will be presented in comparison to conventional PVD technologies. In summary, the integration of IMP Ti and MOCVD TiN enables the deposition of a highly cost effective, low resistivity, ultra-thin, and low- temperature liners for sub 0.18 micrometers technology node thereby enabling > 500 MHz microprocessor technology.
Archive | 2010
Tushar Mandrekar; Shankar Venkataraman; Zhong Qiang Hua; Manuel A. Hernandez
Archive | 1998
Tushar Mandrekar; Anish Tolia; Nitin Khurana
Materials Science and Engineering B-advanced Functional Solid-state Materials | 2004
Anne Lauwers; Jorge Kittl; Mark van Dal; Oxana Chamirian; M. A. Pawlak; Muriel de Potter; Richard Lindsay; Toon Raymakers; Xavier Pages; Bencherki Mebarki; Tushar Mandrekar; Karen Maex
Archive | 2000
Tushar Mandrekar; Anish Tolia; Nitin Khurana
Archive | 2011
Bencherki Mebarki; Hao Chen; Kedar Sapre; Anchuan Wang; Tushar Mandrekar; Jingmei Liang; Yongmei Chen; Christopher S. Ngai; Mehul Naik
Archive | 2002
Tushar Mandrekar
Archive | 1999
Ted Yoshidome; Tushar Mandrekar; Nitin Khurana; Anish Tolia
Proceedings of SPIE | 2011
Bencherki Mebarki; Hao D. Chen; Yongmei Chen; Aunchan Wang; Jingmei Liang; Kedar Sapre; Tushar Mandrekar; Xiaolin Chen; Ping Xu; Pokhui Blanko; Christopher S. Ngai; Christopher Dennis Bencher; Mehul Naik