Tzvetan Ivanov

Scanning probes in nanostructure fabrication

Scanning probes have enabled modern nanoscience and are still the backbone of todays nanotechnology. Within the technological development of AFM systems, the cantilever evolved from a simple passive deflection element to a complex microelectromechanical system through integration of functional groups, such as piezoresistive detection sensors and bimaterial based actuators. Herein, the authors show actual trends and developments of miniaturization efforts of both types of cantilevers, passive and active. The results go toward the reduction of dimensions. For example, the authors have fabricated passive cantilever with a width of 4 μm, a length of 6 μm and thickness of 50–100 nm, showing one order of magnitude lower noise levels. By using active cantilevers, direct patterning on calixarene is demonstrated employing a direct, development-less phenomena triggered by tip emitted low energy (<50 eV) electrons. The scanning probes are not only applied for lithography, but also for imaging and probing of the sur...

Nanoprobe maskless lithography

Scanning probe-based methods for surface modification and lithography are an emerging method of producing sub 20-nm features for nanoelectronic applications. In this study, we have demonstrated the nanoscale lithography based on patterning of 10 to 50-nm-thick calix[4]arene by electric-field-induced electrostatic scanning probe lithography. The features size control is obtained using electrostatic interactions and depends on the applied bias and speed of the AFM tip. The width of the obtained lines and dots varies from 10 to 60 nm depending on tip-sharpness, tip-substrate separation and tip-bias voltage.

Increased imaging speed and force sensitivity for bio-applications with small cantilevers using a conventional AFM setup

Highlights ► Development of small cantilever. ► Speed increase by a factor of ten using small cantilevers on a commercial AFM. ► Force sensitivity increase by a factor of five using small cantilever prototypes for force spectroscopy measurements.

Micromachined scanning proximal probes with integrated piezoresistive readout and bimetal actuator for high eigenmode operation

The fabrication process, application, and properties of a novel piezoresistive multiprobe with an integrated thermal tip deflection actuator are described in this article. The optimized fabrication process of the microprobe enables high-frequency sensor operation and integration of a high sharp conical tip, which was additionally covered with titanium using atomic layer deposition to improve mechanical endurance and ensure electrical conductivity. This microprobe was applied in high-resolution self-assembled monolayer surface investigations in which the piezoresistive cantilever with the integrated thermal deflection actuator was excited at two of its flexural-resonant eigenmodes. The excited second eigenmode and phase show different contrasts com-pared with images recorded at the first eigenmode.

Fast atomic force microscopy with self-transduced, self-sensing cantilever

Abstract. The conventional optical lever detection technique involves optical components and their precise mechanical alignment. An additional technical limit is the weight of the optical system in cases where a top-scanner is used with high-speed and high-precision metrology. An alternative represents the application of self-actuated atomic force microscopy (AFM) cantilevers with integrated two-dimensional electron gas (2-DEG) piezoresistive deflection sensors. A significant improvement in the performance of such cantilevers with respect to deflection sensitivity and temperature stability has been achieved by using an integrated Wheatstone bridge configuration. Due to employing effective crosstalk isolation and temperature drift compensation, the performance of these cantilevers was significantly improved. In order to enhance the speed of AFM measurements, we present an adaptive scanning speed procedure. Examples of AFM measurements with a high scanning speed (up to 200  lines/s) committed to advanced lithography process development are shown.

Pattern-generation and pattern-transfer for single-digit nano devices

Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography

High Performance Single Nanometer Lithography (SNL) is an enabling technology for beyond CMOS and future nanoelectronics. To keep on with scaling down nanoelectronic components, novel instrumentation for nanometer precise placement, overlay alignment and measurement are an essential pre-requirement to realize Next Generation Lithography (NGL) systems. In particular, scanning probe based methods for surface modification and lithography are an emerging method for producing sub-10 nm features. In this study, we demonstrate nano-scale lithography using a scanning probe based method in combination with a Nanopositioning and Nanomeasuring Machine. The latter one has a measuring range of 25 mm x 25 mm x 5 mm, 0.1 nanometer resolution and outstanding nanometer accuracy. The basic concept consists of a special arrangement allowing Abbe error free measurements in all axes over the total scan range. Furthermore, the Nanopositioning and Nanomeasuring Machine is able to store the exact location that can be found again with an accuracy of less than 2.5 nanometers. This system is also predestinated for critical dimension, quality and overlay control. The integrated scanning probe lithography is based on electric-field-induced patterning of calixarene. As a result, repeated step response tests are presented in this paper.

Scanning probe lithography approach for beyond CMOS devices

As present CMOS devices approach technological and physical limits at the sub-10 nm scale, a ‘beyond CMOS’ information-processing technology is necessary for timescales beyond the semiconductor technology roadmap. This requires new approaches to logic and memory devices, and to associated lithographic processes. At the sub-5 nm scale, a technology platform based on a combination of high-resolution scanning probe lithography (SPL) and nano-imprint lithography (NIL) is regarded as a promising candidate for both resolution and high throughput production. The practical application of quantum-effect devices, such as room temperature single-electron and quantum-dot devices, then becomes feasible. This paper considers lithographic and device approaches to such a ‘single nanometer manufacturing’ technology. We consider the application of scanning probes, capable of imaging, probing of material properties and lithography at the single nanometer scale. Modified scanning probes are used to pattern molecular glass based resist materials, where the small particle size (<1 nm) and mono-disperse nature leads to more uniform and smaller lithographic pixel size. We also review the current status of single-electron and quantum dot devices capable of room-temperature operation, and discuss the requirements for these devices with regards to practical application.

Self-actuated, self-sensing cantilever for fast CD measurement

The conventional optical lever detection technique involves optical components and its precise mechanical alignment. An additional technical limit is the weight of the optical system, in case a top-scanner is used in high speed and high precision metrology. An alternative represents the application of self-actuated AFM cantilevers with integrated 2DEG piezoresistive deflection sensors. A significant improvement in performance of such cantilevers with respect to deflection sensitivity and temperature stability has been achieved by using an integrated Wheatstone bridge configuration. Due to employing effective cross-talk isolation and temperature drift compensation the performance of these cantilevers was significantly improved. In order to enhance the speed of AFM measurements we are presenting a fast cantilever-approach technology, Q-factor-control and novel adaptive scanning speed procedure. Examples of AFM measurements with high scanning speed (up to 200 lines/s) committed to advanced lithography process development are shown.

Experimental setup for characterization of self-actuated microcantilevers with piezoresistive readout for chemical recognition of volatile substances

This paper summarizes our achievements in the development of an advanced microcantilever-based platform for the detection and recognition of various volatile analytes. The implemented microcantilevers include integrated piezoresistive readout, integrated thermally driven bimorph actuator, and a gold pad at the cantilever apex for functionalization toward the detection of specific substances. Up to eight single microcantilevers can be installed and investigated quasisimultaneously in either gas flow or gas/vapor single injection mode. The experimental setup enables the detection of the microcantilever bending via surface stress changes, characterization of either amplitude or phase spectra of the microcantilever, and also calibration of its sensitivity.