V. Shutthanandan

Nanoscale Effects on Ion Conductance of Layer-by-Layer Structures of Gadolinia-doped Ceria and Zirconia

Layer-by-layer structures of gadolinia-doped ceria and zirconia have been synthesized on Al2O3(0001) using oxygen plasma-assisted molecular beam epitaxy. Oxygen ion conductivity greatly increased with an increasing number of layers compared to bulk polycrystalline yttria-stabilized zirconia and gadolinia-doped ceria electrolytes. The conductivity enhancement in this layered electrolyte is interesting, yet the exact cause for the enhancement remains unknown. For example, the space charge effects that are responsible for analogous conductivity increases in undoped layered halides are suppressed by the much shorter Debye screening length in layered oxides. Therefore, it appears that a combination of lattice strain and extended defects due to lattice mismatch between the heterogeneous structures may contribute to the enhancement of oxygen ionic conductivity in this layered oxide system.

The structure of Na2O–Al2O3–SiO2 glass: impact on sodium ion exchange in H2O and D2O

Abstract The kinetics of matrix dissolution and alkali-exchange for a series of sodium aluminosilicate glass compositions was determined at constant temperature and solution pH(D) under conditions of silica-saturation. Steady state release rate for sodium was 10–50 times faster than the rate of matrix dissolution, demonstrating that alkali exchange is an important long-term reaction mechanism that must be considered when modeling systems near saturation with respect to dissolved glass components. Sodium release rates were 30% slower in D 2 O compared to rates in H 2 O; but matrix dissolution rates were unaffected. These results are consistent with rupture of the OH bond as the rate-limiting reaction in Na + –H + exchange whereas matrix dissolution is controlled by OH − or H 2 O catalyzed hydrolysis of SiOSi and SiOAl bonds. Changes in Na exchange rate with increasing Al 2 O 3 content could not be reconciled with changes in the number of non-bridging oxygen (NBO) sites in the glass alone. A simple model was used to estimate a structural energy barrier for alkali ion exchange using NaO bond length and co-ordination as measured by Na K-edge X-ray absorption spectroscopy, and binding energy shifts for SiONa sites measured by X-ray photoelectron spectroscopy (XPS). The energy barrier was calculated to increase from 34 kJ mol −1 for Na 2 O·2SiO 2 glass to 49 kJ mol −1 for a glass containing 15 mol% Al 2 O 3 , consistent with stronger bonding of Na on NBO sites and increasing mechanical stiffness of the glass network with increasing Al content. The calculated ion-exchange enthalpies were then used to calculate Na ion-exchange rates as a function of glass composition. Agreement between the calculated and measured Na ion exchange rates was excellent.

Epitaxial growth and properties of MBE-grown ferromagnetic Co-doped TiO2 anatase films on SrTiO3(001) and LaAlO3(001)

Abstract We have investigated the heteroepitaxial growth and materials properties of pure and Co-doped TiO 2 anatase on SrTiO 3 (001) and LaAlO 3 (001), grown by oxygen plasma assisted molecular beam epitaxy. This material is a promising new diluted magnetic semiconductor that shows large magnetization and a Curie temperature well above room temperature. We have found that epitaxial films with the highest crystalline quality and most uniform distribution of Co result when a rather slow growth rate (∼0.01 nm/s) is used over a substrate temperature range of 550–600 °C on LaAlO 3 (001). These conditions result in layer-by-layer growth of single-crystal films and a very low density of extremely small nanocrystalline inclusions. In contrast, growth at a higher rate (∼0.04 nm/s) leads to extensive formation of secondary-phase rutile nanocrystals to which Co diffuses and segregates. The rutile nanocrystals nucleate on the evolving anatase film surface in such a way that lattice strain between the two phases is minimized. Cobalt appears to substitute for Ti in the lattice and exhibits a +2 formal oxidation state. Both pure and Co-doped films can be grown as n-type semiconductors by controlled incorporation of oxygen atom vacancies. Free electrons are required to couple the Co(II) spin to a ferromagnetic state.

Room-temperature ferromagnetism in chemically synthesized Sn1−xCoxO2 powders

Room-temperature ferromagnetism is observed in chemically synthesized powder samples of Sn1−xCoxO2 with x=0.005 and 0.01. Magnetic hysteresis loops are observed at 300K with coercivity Hc∼630Oe, saturation magnetization Ms∼0.133μB∕Co ion, and about 31% remanence. Analyses of the magnetization data of paramagnetic samples with x=0.01 and 0.03, measured as a function of temperature (3–330K) and magnetic field (up to 65kOe), indicate the presence of Co+2 ions with spin S=3∕2. Magnetic data obtained from samples prepared at different temperatures indicate that the observed ferromagnetism for x⩽0.01 might have been triggered by changes in the oxygen stoichiometry.

Lack of ferromagnetism in n-type cobalt-doped ZnO epitaxial thin films

Epitaxial thin films of cobalt-doped ZnO (Co : ZnO) were deposited by pulsed laser deposition (PLD) on both c-plane and r-plane sapphire (Al2 O3). The films exhibited high structural quality with narrow x-ray diffraction (XRD) rocking curve peak widths. X-ray absorption spectroscopy (XANES and EXAFS) confirmed well-ordered Co substitution for Zn in ZnO without the formation of secondary phases. A wide range of n-type conductivities (10−4–105 Ω cm) was achieved by controlling the deposition conditions, post-annealing in vacuum, and/or addition of Al during deposition. Despite the high structural quality of the Co : ZnO thin films, no significant room temperature ferromagnetism was observed under any processing or treatment conditions. The lack of ferromagnetism indicates that itinerant conduction band electrons alone are not sufficient to induce ferromagnetism in Co : ZnO, even when the carrier concentration is a significant fraction of the magnetic dopant concentration. The implications of this observation are discussed.

Ferromagnetic Cr-doped ZnO for spin electronics via magnetron sputtering

Through nonequilibrium rf magnetron cosputtering of ZnO and Cr metal on a-plane Al2O3 we find ferromagnetic ordering with a room-temperature saturation moment of 1.4μB per Cr ion at a doping concentration of ∼9.5 at. % after UHV postanneal. No secondary phases are detected in the films via x-ray diffraction (XRD). Increased Cr doping causes disorder within the films resulting in decreased overall, and per Cr, moment. The Curie temperature exceeds 365 K, the maximum temperature reached in our experiment. All films are dielectric with a resistivity higher than 106Ωcm at room temperature. The lack of carriers indicates that the ferromagnetic mechanism is not carrier mediated.

Core-shell diamond as a support for solid-phase extraction and high-performance liquid chromatography.

We report the formation of core-shell diamond particles for solid-phase extraction (SPE) and high-performance liquid chromatography (HPLC) made by layer-by-layer (LbL) deposition. Their synthesis begins with the amine functionalization of microdiamond by its immersion in an aqueous solution of a primary amine-containing polymer (polyallylamine (PAAm)). The amine-terminated microdiamond is then immersed in an aqueous suspension of nanodiamond, which leads to adsorption of the nanodiamond. Alternating (self-limiting) immersions in the solutions of the amine-containing polymer and the suspension of nanodiamond are continued until the desired number of nanodiamond layers is formed around the microdiamond. Finally, the core-shell particles are cross-linked with 1,2,5,6-diepoxycyclooctane or reacted with 1,2-epoxyoctadecane. Layer-by-layer deposition of PAAm and nanodiamond is also studied on planar Si/SiO(2) surfaces, which were characterized by scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA). Core-shell particles are characterized by diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), environmental scanning electron microscopy (ESEM), and Brunauer-Emmett-Teller (BET) surface area and pore size measurements. Larger (ca. 50 microm) core-shell diamond particles have much higher surface areas and analyte loading capacities in SPE than nonporous solid diamond particles. Smaller (ca. 3 microm), normal and reversed-phase, core-shell diamond particles have been used for HPLC, with 36,300 plates/m for mesitylene in a separation of benzene and alkyl benzenes and 54,800 plates/m for diazinon in a similar separation of two pesticides on a C(18) adsorbent.

Effects of Implantation Temperature on Damage Accumulation in Al-Implanted 4H-SiC

Damage accumulation in 4H–SiC under 1.1 MeV Al22+ irradiation is investigated as a function of dose at temperatures from 150 to 450 K. Based on Rutherford backscattering spectroscopy and nuclear reaction analysis channeling spectra, the damage accumulation on both the Si and C sublattices have been determined, and a disorder accumulation model has been fit to the data. The model fits indicate that defect-stimulated amorphization is the primary amorphization mechanism in SiC over the temperature range investigated. The temperature dependence of the cross section for defect-stimulated amorphization and the critical dose for amorphization indicate that two different dynamic recovery processes are present, which are attributed to short-range recombination and long-range migration of point defects below and above room temperature, respectively. As the irradiation temperature approaches the critical temperature for amorphization, cluster formation has an increasing effect on disorder accumulation, and ion flux ...

Growth and properties of molecular beam epitaxially grown ferromagnetic Fe-doped TiO2 rutile films on TiO2(110)

We have grown epitaxial Fe-doped TiO2 rutile films on rutile TiO2(110) substrates, and have explored the resulting compositional, structural, morphological and magnetic properties. Clusters of mixed TiO2 rutile and Fe3O4 form on the surface of a continuous rutile epitaxial film during growth. Room-temperature ferromagnetism is observed, and is associated with the formation of secondary phase Fe3O4 rather than a true diluted magnetic oxide semiconductor.

Thermodynamic instability at the stoichiometric LaAlO3/SrTiO3(001) interface

Stoichiometric epitaxial LaAlO(3) grown on TiO(2)-terminated SrTiO(3)(001) by off-axis pulsed laser deposition is shown to exhibit strong cation intermixing. This result is corroborated by classical and quantum mechanical calculations of the relative stabilities of abrupt and intermixed interface configurations. The valence band offset was measured to be 0.16 ± 0.10 eV, and this value cannot be accounted for theoretically without including intermixing in the physical description of the interface.