V W. Tsai

Algorithms for calculating single-atom step heights

Recently, our work on the measurement of Si(111) single atomic steps has prompted us to investigate the algorithm for the calculation of a one-sided step height. We compared the results of a two-point subtraction and a histogram technique under different conditions of surface tilt with respect to the measuring frame. By evaluating a simulated Si(111) atomic step, we found its calculated height could deviate from the true value as high as 2% due to a misalignment of the measuring axis and sample axis of 0.1°.

Dimensional metrology with the NIST calibrated atomic force microscope

AFMs are increasingly used in the semiconductor industry as tools for sub-micrometer dimensional metrology. The scale of an AFM must be calibrated in order to perform accurate measurements. We have designed and developed the calibrated AFM (C-AFM) at the NIST to calibrate standards. Specifically, our primary calibrations are expected to be of combined pitch/height, or 3D magnification standards for AFM. THe C-AFM has metrology traceable to the International System of Units meter for all three axes. This is accomplished through the integration of a flexure x-y translation stage, heterodyne laser interferometers, and a z-axis piezoelectric actuator with an integrated capacitance sensor. Our first pitch measurements for an outside customer were recently compete, in which we were able to report relative expanded uncertainties as low as 1 percent on sub- micrometer pitches. The uncertainty budget for these measurements includes the effect of sample non-uniformity, which is the dominant contribution for some of the reported uncertainties. Four samples were measured - two with grid patterns and two with grid recently made considerable improvements in our uncertainty budget for step height measurements. For example, we recently achieved 0.2 nm expanded uncertainty on a 20 nm step, and achieved 0.008 nm expanded uncertainty in the measurement of the approximately 0.3 nm single atom step on Si. We also participated in the recently competed first round of the NIST linewidth correlation project, in which linewidht measurements obtained from different methods are compared. In this paper, we will report on the current status of the C-AFM, and on our plans for further development.

Increasing the value of atomic force microscopy process metrology using a high‐accuracy scanner, tip characterization, and morphological image analysis

Atomic force microscopes are being used increasingly for process metrology. As a case study, the measurement by atomic force microscope of a soda lime glass optical disk patterned using optical lithography and reactive plasma etching is examined. The atomic force microscope used for this measurement has a highly accurate scanner system. The X, Y, and Z axes are calibrated using laser interferometry. To determine the shape of the tip used a commercially available tip calibration artifact was imaged both before and after the measurement. The image was corrected for the tip shape using mathematical morphology. The value of the atomic force microscope measurement is defined to be the impacts of the metrology on the product or process. It is shown that the value of atomic force microscopy process metrology on an optical disk is increased by using an accurate scanner, tip characterization, and morphological image analysis; however, the cost per measurement is increased as well. In general, the characteristics o...

Step-height metrology for data storage applications

The measurement of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) is quite different from the measurement of step heights on step height calibration standards. Both the bumps and the pits show much larger transition regimes and more structural irregularities. The irregularities disqualify the effective use of profile based algorithms, which minimize the influence of any remaining motion deviations of the scan apparatus, to determine the height. Therefore a histogram height algorithm has to be used. The results of the bump height and pit depth measurements varied about 20 nm over the different sample regions. The remaining approximately 30 nm difference between the average of the bump height and pit depth is believed to result from the sample preparation procedure. By itself, the large sample variation observed will result in rather large measurement uncertainties for the measurement of the average height and depth of these features, if the averaging does not include a large amount of data taken at many different sample positions.

Developing a method to determine linewidth based on counting the atom spacings across a line

We are developing the instrumentation and prototype samples at NIST to enable the counting of atom-spacings across linewidth features etched in silicon. This is an effort to allow the accurate counting of atom-spacings across a feature in a controlled environment and to subsequently transfer that dimensionally stabilized artifact to other measuring instruments. In this paper we will describe the sample preparation techniques, sample configurations and imaging instrumentation used in this project. We have constructed a multi-chamber ultra-high vacuum (UHV) system with silicon processing capabilities which include the high temperature removal of native oxides and the appropriate temperature control and vacuum environment for preparing long range atomically ordered silicon surfaces. We can also passivate the silicon surfaces by oxidation in a temperature and pressure controlled environment or simply allow a native oxide to grow in an air ambient. This facility has a scanning tunneling microscope (STM) with atomic lateral imaging capabilities and a 0.2 angstrom vertical noise floor. The loadlock chamber allows rapid transfer of multiple tips and samples into the UHV environment. The facility is additionally equipped with a field-ion/field-electron microscope (FIFEM) which can atomically image, measure, and prepare the STM tips. The FIFEM enables the use of STM tips of known dimensions and cleanliness on a regular basis.