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Dive into the research topics where Vancho Kocevski is active.

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Featured researches published by Vancho Kocevski.


Nature Communications | 2014

Quantitative characterization of nanoscale polycrystalline magnets with electron magnetic circular dichroism

Shunsuke Muto; Jan Rusz; Kazuyoshi Tatsumi; Roman Adam; Shigeo Arai; Vancho Kocevski; Peter M. Oppeneer; Daniel E. Bürgler; Claus M. Schneider

Electron magnetic circular dichroism (EMCD) allows the quantitative, element-selective determination of spin and orbital magnetic moments, similar to its well-established X-ray counterpart, X-ray magnetic circular dichroism (XMCD). As an advantage over XMCD, EMCD measurements are made using transmission electron microscopes, which are routinely operated at sub-nanometre resolution, thereby potentially allowing nanometre magnetic characterization. However, because of the low intensity of the EMCD signal, it has not yet been possible to obtain quantitative information from EMCD signals at the nanoscale. Here we demonstrate a new approach to EMCD measurements that considerably enhances the outreach of the technique. The statistical analysis introduced here yields robust quantitative EMCD signals. Moreover, we demonstrate that quantitative magnetic information can be routinely obtained using electron beams of only a few nanometres in diameter without imposing any restriction regarding the crystalline order of the specimen.


Scientific Reports | 2015

First-principles study of the influence of different interfaces and core types on the properties of CdSe/CdS core-shell nanocrystals

Vancho Kocevski; Jan Rusz; Olle Eriksson; D. D. Sarma

With the expanding field of nanoengineering and the production of nanocrystals (NCs) with higher quality and tunable size, having reliable theoretical calculations to complement the experimental results is very important. Here we present such a study of CdSe/CdS core-shell NCs using density functional theory, where we focus on dependence of the properties of these NCs on core types and interfaces between the core and the shell, as well as on the core/shell ratio. We show that the density of states and the absorption indices depend rather weakly on the type of interface and core type. We demonstrate that the HOMO wavefunction is mainly localised in the core of the nanocrystal, depending primarily on the core/shell ratio. On the other hand the LUMO wavefunction spreads more into the shell of the nanocrystal, where its confinement in the core is almost the same in each of the studied structural models. Furthermore, we show that the radiative lifetimes decrease with increasing core sizes due to changes in the dipolar overlap integral of the HOMO and LUMO wavefunctions. In addition, the electron-hole Coulomb interaction energies follow a similar pattern as the localisation of the wavefunctions, with the smaller NCs having higher Coulomb interaction energies.


Journal of Physical Chemistry Letters | 2016

Mapping of Defects in Individual Silicon Nanocrystals Using Real- Space Spectroscopy

Dmitry A. Kislitsyn; Vancho Kocevski; Jon M. Mills; Sheng-Kuei Chiu; Christian F. Gervasi; Benjamen N. Taber; Ariel E. Rosenfield; Olle Eriksson; Jan Rusz; Andrea M. Goforth; George V. Nazin

The photophysical properties of silicon semiconductor nanocrystals (SiNCs) are extremely sensitive to the presence of surface chemical defects, many of which are easily produced by oxidation under ambient conditions. The diversity of chemical structures of such defects and the lack of tools capable of probing individual defects continue to impede understanding of the roles of these defects in SiNC photophysics. We use scanning tunneling spectroscopy to study the impact of surface defects on the electronic structures of hydrogen-passivated SiNCs supported on the Au(111) surface. Spatial maps of the local electronic density of states (LDOS) produced by our measurements allowed us to identify locally enhanced defect-induced states as well as quantum-confined states delocalized throughout the SiNC volume. We use theoretical calculations to show that the LDOS spectra associated with the observed defects are attributable to Si-O-Si bridged oxygen or Si-OH surface defects.


Journal of Chemical Physics | 2015

Influence of dimensionality and interface type on optical and electronic properties of CdS/ZnS core-shell nanocrystals—A first-principles study

Vancho Kocevski; Olle Eriksson; Celine Gerard; D. D. Sarma; Jan Rusz

Semiconducting nanocrystals (NCs) have become one of the leading materials in a variety of applications, mainly due to their size tunable band gap and high intensity emission. Their photoluminescence (PL) properties can be notably improved by capping the nanocrystals with a shell of another semiconductor, making core-shell structures. We focus our study on the CdS/ZnS core-shell nanocrystals that are closely related to extensively studied CdSe/CdS NCs, albeit exhibiting rather different photoluminescence properties. We employ density functional theory to investigate the changes in the electronic and optical properties of these nanocrystals with size, core/shell ratio, and interface structure between the core and the shell. We have found that both the lowest unoccupied eigenstate (LUES) and the highest occupied eigenstate (HOES) wavefunction (WF) are localized in the core of the NCs, with the distribution of the LUES WF being more sensitive to the size and the core/shell ratio. We show that the radiative lifetimes are increasing, and the Coulomb interaction energies decrease with increasing NC size. Furthermore, we investigated the electronic and optical properties of the NCs with different interfaces between the core and the shell and different core types. We find that the different interfaces and core types have rather small influence on the band gaps and the absorption indexes, as well as on the confinement of the HOES and LUES WFs. Also the radiative lifetimes are found to be only slightly influenced by the different structural models. In addition, we compare these results with the previous results for CdSe/CdS NCs, reflecting the different PL properties of these two types of NCs. We argue that the difference in their Coulomb interaction energies is one of the main reasons for their distinct PL properties.


Ultramicroscopy | 2016

Influence of nuclear quantum effects on frozen phonon simulations of electron vortex beam HAADF-STEM images.

André Löfgren; Paul Zeiger; Vancho Kocevski; Jan Rusz

We have evaluated atomic resolution high-angle annular dark field images with ordinary beams and electron vortex beams for thin crystals of bcc iron, explicitly considering the atomic vibrations using molecular dynamics. The shape of the image representing an atomic column depends on the orbital angular momentum, sample thickness and temperature. For electron vortex beams we observe characteristic doughnut-shaped images of atomic columns. It is shown how the thermal diffuse scattering reduces the depth of their central minima, which get further smeared by finite source size effects. In addition, it is shown that in calculations of HAADF-STEM images at low temperatures one has to explicitly consider the nuclear quantum effects (zero point vibrations), otherwise the effect of atomic vibrations is strongly underestimated.


Scientific Reports | 2018

Understanding the Stability of Salt-Inclusion Phases for Nuclear Waste-forms through Volume-based Thermodynamics

Emily E. Moore; Vancho Kocevski; Christian A. Juillerat; Gregory Morrison; Mingyang Zhao; Kyle Brinkman; Hans-Conrad zur Loye; Theodore M. Besmann

Formation enthalpies and Gibbs energies of actinide and rare-earth containing SIMs with silicate and germanate frameworks are reported. Volume-based thermodynamics (VBT) techniques complemented by density functional theory (DFT) were adapted and applied to these complex structures. VBT and DFT results were in closest agreement for the smaller framework silicate structure, whereas DFT in general predicts less negative enthalpies across all SIMs, regardless of framework type. Both methods predict the rare-earth silicates to be the most stable of the comparable structures calculated, with VBT results being in good agreement with the limited experimental values available from drop solution calorimetry.


Journal of Chemical Physics | 2018

Temperature dependence of radiative lifetimes, optical and electronic properties of silicon nanocrystals capped with various organic ligands

Vancho Kocevski

Despite the known temperature effects on the optical and photoluminescence properties of silicon nanocrystals (Si NCs), most of the density functional theory calculations thus far have been carried out at zero temperature, i.e., fixed atomic positions. We present a study of the effect of finite temperature on the radiative lifetimes and bandgaps of Si NCs capped with six different organic ligands, CH3, C2H5, C2H4Cl, C2H4OH, C2H4SH, and C2H4NH2. In addition, we show the differences in electronic and optical properties, as well as the wavefunctions (WFs) around the bandgap, of the capped Si NCs at zero temperature. We show that the NCs capped with alkyl and C2H4Cl ligands have larger HOMO-LUMO and optical absorption gaps compared to the C2H4NH2, C2H4OH, and C2H4SH capped NCs. We demonstrate that this big difference in both gaps comes from the increased contribution to the states at the top of the valence band from the NH2, OH, and SH groups of the C2H4NH2, C2H4OH, and C2H4SH ligands, respectively. Additionally, we assigned the rather weak dependence of the radiative lifetimes of C2H4NH2 capped NCs on the NC size to the slightly changing symmetry of the highly localized HOMO WF at the NH2 group. Furthermore, we demonstrate that the temperature effect on the radiative lifetimes and bandgaps is larger in alkyl and C2H4Cl capped Si NCs. We indicate that the decrease in radiative lifetime of the CH3 capped NCs with increasing temperature comes from the changing symmetry of the LUMO WF and the increased dipolar overlap between the HOMO and LUMO WFs. Finally, we show that there is a constant decrease in the bandgaps of the Si NCs with increasing size, with the bandgap change of CH3 capped NCs being larger compared to the bandgap change of the C2H4NH2 capped NCs.


Journal of Chemical Physics | 2016

Communication: Visualization and spectroscopy of defects induced by dehydrogenation in individual silicon nanocrystals

Dmitry A. Kislitsyn; Jon M. Mills; Vancho Kocevski; Sheng-Kuei Chiu; William J. I. DeBenedetti; Christian F. Gervasi; Benjamen N. Taber; Ariel E. Rosenfield; Olle Eriksson; Jan Rusz; Andrea M. Goforth; George V. Nazin

We present results of a scanning tunneling spectroscopy (STS) study of the impact of dehydrogenation on the electronic structures of hydrogen-passivated silicon nanocrystals (SiNCs) supported on the Au(111) surface. Gradual dehydrogenation is achieved by injecting high-energy electrons into individual SiNCs, which results, initially, in reduction of the electronic bandgap, and eventually produces midgap electronic states. We use theoretical calculations to show that the STS spectra of midgap states are consistent with the presence of silicon dangling bonds, which are found in different charge states. Our calculations also suggest that the observed initial reduction of the electronic bandgap is attributable to the SiNC surface reconstruction induced by conversion of surface dihydrides to monohydrides due to hydrogen desorption. Our results thus provide the first visualization of the SiNC electronic structure evolution induced by dehydrogenation and provide direct evidence for the existence of diverse dangling bond states on the SiNC surfaces.


Physical Review B | 2015

Band alignment switching and the interaction between neighbouring silicon nanocrystals embedded in a SiC matrix

Vancho Kocevski; Olle Eriksson; Jan Rusz

We present results from density functional theory of the electronic properties of silicon nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix, considering different combinations of var ...


Physical Review B | 2013

Transition between direct and indirect band gap in silicon nanocrystals

Vancho Kocevski; Olle Eriksson; Jan Rusz

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Jan Rusz

Czech Technical University in Prague

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Jan Rusz

Czech Technical University in Prague

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D. D. Sarma

Indian Institute of Science

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Andrea M. Goforth

University of South Carolina

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