Vikram Magoon

A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier

The growing occurrences of WLAN, BT, and FM on the same mobile device have created a demand for putting all three on the same die to save on die size, I/O count, BOM, and ultimately cost. Common blocks such as crystal oscillator, bandgap, and power management units can be easily shared. This paper presents a solution in which 802.11a/b/g WLAN, single-stream 11n (SSN) WLAN, BT, and FM subsystem and radio are integrated on a single die.

Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2

Fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are presented. With a 3.3 V supply, the PAs produce a saturated output power of 28.3 dBm and 26.7 dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25 dB is achieved at 22.4 dBm for the 2.4 GHz band and 20.5 dBm for the 5 GHz band while transmitting 54 Mbs OFDM. The chip is fabricated in standard 65 nm CMOS and the PAs occupy 0.31 mm2 (2.4 GHz) and 0.27 mm2 (5 GHz) area. To examine the reliability of the PAs, accelerated aging tests are performed for several hundreds parts without a single failure.

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Fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are presented. With a 3.3v supply, the PAs produce a saturated output power of 28.3dBm and 26.7dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4GHz and 5GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of −25dB is achieved at 22.4dBm for the 2.4GHz band and 20.5dBm for the 5GHz band while transmitting 54Mbs OFDM. The chip is fabricated in standard 65nm CMOS and the PAs occupy 0.31mm2 (2.4G) and 0.27mm2 (5G) area.