Viktor Sverdlov

The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

A model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon is developed. Analytical expressions for the effective mass change induced by shear strain and valley shifts/splittings are derived using a degenerate kldrp theory at the zone-boundary X point. Good agreement to numerical band- structure calculations using the nonlocal empirical pseudopotential method with spin-orbit interactions is observed. The model is validated by calculating the bulk electron mobility under general strain with a Monte Carlo technique using the full-band structure and the proposed analytical model for the band structure. Finally, the impact of strain on the inversion-layer mobility of electrons is discussed.

Emerging memory technologies: Trends, challenges, and modeling methods

In this paper we analyze the possibility of creating a universal non-volatile memory in a near future. Unlike DRAM and flash memories a new universal memory should not require electric charge storing, but alternative principles of information storage. For the successful application a new universal memory must also exhibit low operating voltages, low power consumption, high operation speed, long retention time, high endurance, and a simple structure. Several alternative principles of information storage are reviewed. We discuss different memory technologies based on these principles, highlight the most promising candidates for future universal memory, make an overview of the current state-of-the-art of these technologies, and outline future trends and possible challenges by modeling the switching process.

Shot-noise suppression at two-dimensional hopping

We have used Monte Carlo simulation to calculate the shot noise intensity

Effects of shear strain on the conduction band in silicon: An efficient two-band k·p theory

S_I(\omega)

Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits

at 2D hopping using two models: a slanted lattice of localized sites with equal energies and a set of localized sites with random positions and energies. For wide samples we have found a similar dependence of the Fano factor

MRAM-based logic array for large-scale non-volatile logic-in-memory applications

F \equiv S_I(0)/2eI

Rigorous simulation study of a novel non-volatile magnetic flip-flop

on the sample length

Design and applications of magnetic tunnel junction based logic circuits

L

Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling

:

Strain engineering for CMOS devices

F \propto L^{-\alpha}