Virinder Grewal

Method for generating contact holes with beveled sidewalls in intermediate oxide layers

Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud

Anisotropic dry etching of aluminium (alloy) circuits - using plasma of chlorine, nitrogen and argon

Method for manufacturing solderable, temperable, thin film tracks which do not contain precious metal

Method for producing contact holes with sloping walls in intermediate oxide layers.

Method for the global planarisation of surfaces for integrated semiconductor circuits

Method of planarizing inorganic insulating layers for use as intermediate insulating layers in multilevel interconnections

Method for filling contact holes etched in an insulating layer, with tungsten, for the manufacture of highly integrated semi-conductor circuits.

Method for etching an Al metallization by a C12/HC1 based plasma

Method of forming self-aligned contact holes using a sacrificial polysilicon layer