Vladimir Bolkhovsky

A near–quantum-limited Josephson traveling-wave parametric amplifier

Stringing together a powerful amplifier Amplifying microwave signals with high gain and across a broad range of frequencies is crucial in solid-state quantum information processing (QIP). Achieving broadband operation is especially tricky. Macklin et al. engineered an amplifier that contains a long chain of so-called Josephson junctions (see the Perspective by Cleland). The amplifier exhibited high gain over a gigahertz-sized bandwidth and was able to perform high-fidelity qubit readout. Because the amplifier will be capable of reading out as many as 20 qubits simultaneously, it may help to scale up QIP protocols. Science, this issue p. 307; see also p. 280 A microwave amplifier containing a chain of Josephson junctions shows promising performance. [Also see Perspective by Cleland] Detecting single–photon level signals—carriers of both classical and quantum information—is particularly challenging for low-energy microwave frequency excitations. Here we introduce a superconducting amplifier based on a Josephson junction transmission line. Unlike current standing-wave parametric amplifiers, this traveling wave architecture robustly achieves high gain over a bandwidth of several gigahertz with sufficient dynamic range to read out 20 superconducting qubits. To achieve this performance, we introduce a subwavelength resonant phase-matching technique that enables the creation of nonlinear microwave devices with unique dispersion relations. We benchmark the amplifier with weak measurements, obtaining a high quantum efficiency of 75% (70% including noise added by amplifiers following the Josephson amplifier). With a flexible design based on compact lumped elements, this Josephson amplifier has broad applicability to microwave metrology and quantum optics.

Study of loss in superconducting coplanar waveguide resonators

Superconducting coplanar waveguide (SCPW) resonators have a wide range of applications due to the combination of their planar geometry and high quality factors relative to normal metals. However, their performance is sensitive to both the details of their geometry and the materials and processes that are used in their fabrication. In this paper, we study the dependence of SCPW resonator performance on materials and geometry as a function of temperature and excitation power. We measure quality factors greater than

Advanced Fabrication Processes for Superconducting Very Large-Scale Integrated Circuits

2times10^6

Fabrication Process and Properties of Fully-Planarized Deep-Submicron Nb/Al–

at high excitation power and

\hbox{AlO}_{\rm x}\hbox{/Nb}

6times10^5

Josephson Junctions for VLSI Circuits

at a power comparable to that generated by a single microwave photon circulating in the resonator. We examine the limits to the high excitation power performance of the resonators and find it to be consistent with a model of radiation loss. We further observe that while in all cases the quality factors are degraded as the temperature and power are reduced due to dielectric loss, the size of this effect is dependent on resonator materials and geometry. Finally, we demonstrate that the dielectric loss can be controlled in principle using a separate excitation near the resonance frequencies of the resonator.

Inductance of Circuit Structures for MIT LL Superconductor Electronics Fabrication Process With 8 Niobium Layers

We review the salient features of two advanced nodes of an 8-Nb-layer fully planarized process developed recently at MIT Lincoln Laboratory for fabricating single flux quantum (SFQ) digital circuits with very large-scale integration on 200-mm wafers: the SFQ4ee and SFQ5ee nodes, where “ee” denotes that the process is tuned for energy-efficient SFQ circuits. The former has eight superconducting layers with 0.5-μm minimum feature size and a 2-Ω/sq Mo layer for circuit resistors. The latter has nine superconducting layers: eight Nb wiring layers with the minimum feature size of 350 nm and a thin superconducting MoNx layer (Tc ~ 7.5 K) with high kinetic inductance (about 8 pH/sq) for forming compact inductors. A nonsuperconducting (Tc <; 2 K) MoNx layer with lower nitrogen content is used for 6-Ω/sq planar resistors for shunting and biasing of Josephson junctions (JJs). Another resistive layer is added to form interlayer sandwich-type resistors of milliohm range for releasing unwanted flux quanta from superconducting loops of logic cells. Both process nodes use Au/Pt/Ti contact metallization for chip packaging. The technology utilizes one layer of Nb/AlOx-Al/Nb JJs with critical current density Jc of 100 μA/μm2 and minimum diameter of 700 nm. Circuit patterns are defined by 248-nm photolithography and high-density plasma etching. All circuit layers are fully planarized using chemical mechanical planarization of SiO2 interlayer dielectric. The following results and topics are presented and discussed: the effect of surface topography under the JJs on the their properties and repeatability, Ic and Jc targeting, effect of hydrogen dissolved in Nb, MoNx properties for the resistor layer and for high-kinetic-inductance layer, and technology of milliohm-range resistors.

Resonance Fluorescence from an Artificial Atom in Squeezed Vacuum

A fabrication process for Nb/Al-AlOx/Nb Josephson junctions (JJs) with sizes down to 200 nm has been developed on a 200-mm-wafer tool set typical for CMOS foundry. This process is the core of several nodes of a roadmap for fully-planarized fabrication processes for superconductor integrated circuits with 4, 8, and 10 niobium layers developed at MIT Lincoln Laboratory. The process utilizes 248 nm photolithography, anodization, high-density plasma etching, and chemical mechanical polishing (CMP) for planarization of SiO2 interlayer dielectric. JJ electric properties and statistics such as on-chip and wafer spreads of critical current, Ic, normal-state conductance, GN, and run-to-run reproducibility have been measured on 200-mm wafers over a broad range of JJ diameters from 200 nm to 1500 nm and critical current densities, Jc, from 10 kA/cm2 to 50 kA/cm2 where the JJs become self-shunted. Diffraction-limited photolithography of JJs is discussed. A relationship between JJ mask size, JJ size on wafer, and the minimum printable size for coherent and partially coherent illumination has been worked out. The GN and Ic spreads obtained have been found to be mainly caused by variations of the JJ areas and agree with the model accounting for an enhancement of mask errors near the diffraction-limited minimum printable size of JJs. Ic and GN spreads from 0.8% to 3% have been obtained for JJs with sizes from 1500 nm down to 500 nm. The spreads increase to about 8% for 200-nm JJs. Prospects for circuit densities > 106 JJ/cm2 and 193-nm photolithography for JJ definition are discussed.

Deep sub-micron stud-via technology of superconductor VLSI circuits

Inductance of superconducting thin-film inductors and structures with linewidth down to 250 nm has been experimentally evaluated. The inductors include various striplines and microstrips, their 90° bends and meanders, interlayer vias, etc., typically used in superconducting digital circuits. The circuits have been fabricated by a fully planarized process with 8 niobium layers, developed at MIT Lincoln Laboratory for very-large-scale superconducting integrated circuits. Excellent run-to-run reproducibility and inductance uniformity of better than 1% across 200-mm wafers have been found. It has been found that the inductance per unit length of stripline and microstrip line inductors continues to grow as the inductor linewidth is reduced deep into the submicron range to the widths comparable to the film thickness and magnetic field penetration depth. It is shown that the linewidth reduction does not lead to widening of the parameter spread due to diminishing sensitivity of the inductance to the linewidth and dielectric thickness. The experimental results were compared with numeric inductance extraction using commercial software and freeware, and a good agreement was found for 3-D inductance extractors. Methods of further miniaturization of circuit inductors for achieving circuit densities> 106 Josephson junctions per cm2 are discussed.

Driven Dynamics and Rotary Echo of a Qubit Tunably Coupled to a Harmonic Oscillator

We present an experimental realization of resonance fluorescence in squeezed vacuum. We strongly couple microwave-frequency squeezed light to a superconducting artificial atom and detect the resulting fluorescence with high resolution enabled by a broadband traveling-wave parametric amplifier. We investigate the fluorescence spectra in the weak and strong driving regimes, observing up to 3.1 dB of reduction of the fluorescence linewidth below the ordinary vacuum level and a dramatic dependence of the Mollow triplet spectrum on the relative phase of the driving and squeezed vacuum fields. Our results are in excellent agreement with predictions for spectra produced by a two-level atom in squeezed vacuum [Phys. Rev. Lett. textbf{58}, 2539-2542 (1987)], demonstrating that resonance fluorescence offers a resource-efficient means to characterize squeezing in cryogenic environments.