Vladimir F. Drobny

A Passive UHF RFID Transponder for EPC Gen 2 with -14dBm Sensitivity in 0.13μm CMOS

A passive RFID transponder conforming to the EPC Gen 2 standard is presented, including an RF and analog front-end, EEPROM, and a digital processing core and features a unique RF sampled analog random number generator to support the required anti-collision protocol. Fabricated in 0.13mum CMOS, the 0.55mm2 IC functions at a sensitivity of -14dBm using an 860-to-960MHz carrier at 40-to-160kb/s RX data rates.

Activation behavior of BF 2 + implants in RTP annealed silicon

The sheet resistance (Rs) initially decreases with increasing BF2+ dose for implants exceeding the amorphization dose. This trend reverses after the implanted dose reaches a certain limit. Further dose increase results in a higher Rs and a deeper junction, without offering additional benefits. Fluorine gettered at implant-induced defect sites is responsible for this undesired behavior. Experimental results show that gettered fluorine and boron-fluorine bonds, formed at heavily damaged crystal sites, reduce boron activation.