Wei-Min Lance Kuo

A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules

This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit/receive (T/R) radar modules, focusing on the receiver section of the module. A 5-bit receiver operating from 8 to 10.7 GHz is presented, demonstrating a gain of 11 dB, and average noise figure of 4.1 dB, and an input-referred third-order intercept point (HP3) of -13 dBm, while only dissipating 33 mW of power. The receiver is capable of providing 32 distinct phase states from 0 to 360deg, with an rms phase error < 9deg and an rms gain error < 0.6 dB. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.

An X-band SiGe LNA with 1.36 dB mean noise figure for monolithic phased array transmit/receive radar modules

This paper presents an X-band silicon-germanium (SiGe) low-noise amplifier (LNA) for a monolithically integrated phased array transmit/receive (T/R) radar module. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 730 times 720 mum2 (including bondpads), and dissipates 15 mW from a 2.5 V power supply. The circuit exhibits a gain greater than 19 dB from 8.5 to 10.5 GHz, and a mean noise figure (NF) of 1.36 dB across X-band. At 10 GHz, the input 1-dB compression point (IP1-dB) and the input third-order intercept point (IIP3) are -10.0 dBm and 0.8 dBm, respectively. To our knowledge, this LNA achieves the lowest noise figure of any LNA in Si-based technology at X-band

Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the observed proton tolerance is investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions. In addition, transistors of varying breakdown voltage are used to probe the differences in proton tolerance as a function of collector doping. Our findings indicate that SiGe HBTs continue to exhibit impressive total dose tolerance, even at unprecedented levels of vertical profile scaling and frequency response. Negligible total dose degradation in /spl beta/ (0.3%), f/sub T/ and f/sub max/(6%) are observed in the circuit bias regime, suggesting that SiGe HBT BiCMOS technology is potentially a formidable contender for high-performance space-borne applications.

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V.

A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications

This paper presents a low-power X-band low-noise amplifier (LNA) implemented in silicon-germanium (SiGe) technology targeting high-altitude or space-based low-power density phased-array radar systems. To our knowledge, this X-band LNA is the first in a Si-based technology to achieve less than 2 dB mean noise figure while dissipating only 2 mW from a 1.5 V power supply. The gain of the circuit is 10 dB at 10 GHz with an IIP 3 of 0 dBm. In addition to standard amplifier characterization, the LNAs total dose radiation response has been evaluated.

An 8-bit, 12 GSample/sec SiGe track-and-hold amplifier

We present the design and implementation of an ultra-high-speed SiGe BiCMOS track-and-hold amplifier (THA) for use in high-speed analog-to-digital converters. The use of a degeneration inductor in the input buffer significantly improves the performance of the THA. The THA was fabricated in a commercially-available 0.25 /spl mu/m 200 GHz SiGe HBT BiCMOS process technology. The circuit occupies an area of 1.2 mm/sup 2/, and exhibits -49.5 dBc of total harmonic distortion (THD) when operated at a sampling frequency of 12.5 GHz with an input frequency of 3.0 GHz. Operating from a 3.5 V supply, the total power consumption is 0.7 W. To our knowledge, this circuit is the fastest 8-bit Si-based THA achieved to date.

A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications

We present the design and implementation of an ultra-wideband (UWB) silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) low-noise amplifier (LNA) for use in UWB systems. The use of a shunt base-emitter capacitor and weak shunt resistive feedback in a cascode amplifier with inductive degeneration significantly improves the input bandwidth of the LNA, and allows very low noise figure to be achieved simultaneously. The LNA was fabricated in a commercially-available 0.18 mum 120 GHz SiGe HBT BiCMOS process technology. The circuit occupies an area of 0.72 mm2, and exhibits a record noise figure (NF) of 1.8-3.1 dB across 3.0-10.0 GHz. This SiGe LNA is very broadband, covering the entire frequency range of 0.1 to 13.6 GHz, attains a maximum gain is 20.3 dB, and operates off a 3.3 V supply with a total power consumption of 26 mW

On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs

A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C.

A Low-Power,

A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780times660 mum2. The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications

X

An ultra-high-speed SiGe track-and-hold amplifier (THA) using a switched-emitter-follower (SEF) configuration is presented. Operating off a +5.5 V power supply, this THA exhibits -32.4 dBc of total harmonic distortion (THD) when sampling a 10 GHz input signal at the rate of 40 GS/s, and reaches -50.5 dBc of THD when sampling a 2 GHz input at 12 GS/s. Compared to the THAs published in the literature with an operational range from 10 GS/s to 20 GS/s, the present THA demonstrates a THD comparable to the best one achieved to date to our knowledge for Si technology, with much improved high-frequency characteristics. On the other hand, in the operational range of 30 GS/s and above, the present SiGe THA still exhibits robust characteristics compared to the fastest THAs in terms of linearity, power consumption, and sampling rate.