Werner Kulcke

Digital light deflectors

Several electrooptic digital light deflection techniques have been proposed. The maximum number of resolvable deflection positions for all methods is determined, essentially, by economic reasons, the tolerable amount of background fight, and aberrations. In this paper, three different types of deflection methods (split angle, total internal reflection, Wollaston prism) are described. Design, construction details and performance of three deflector models are reported. Combined deflection systems use the advantageous properties of each of these methods to economically obtain the maximum number of resolvable deflection positions. A suggested combination to achieve 1024 × 1024 positions arranged in a two-dimensional field would consist of one total internal reflection stage, seven stages of split angles, and two stages of Wollaston prisms for each dimension.

Digital Light Deflectors

Several electrooptic digital light deflection techniques have been proposed. The maximum number of resolvable deflection positions for all methods is determined, essentially, by economic reasons, the tolerable amount of background light, and aberrations. In this paper, three different types of deflection methods (split angle, total internal reflection, Wollaston prism) are described. Design, construction details, and performance of three deflector models are reported. Combined deflection systems use the advantageous properties of each of these methods to economically obtain the maximum number of resolvable deflection positions. A suggested combination to achieve 1024x1024 positions arranged in a two-dimensional field would consist of one total internal reflection stage, seven stages of split angles, and two stages of Wollaston prisms for each dimension.

Micropositioning for Submicron Electron Beam Lithography

Positional accuracy is the most important parameter in future lithography for integrated circuits. With shrinking dimensions it is a great challenge to meet the associated overlay requirements. Electron Beam Proximity printing is described as a lithography for future integrated circuit fabrication. A unique correction feature was developed for this exposure method which is applicable for many tool and mask related pattern distortions. Digital signal processor cards have been developed which can handle the large amount of data for corrections in real time during the exposure. Results of this exposure method on test devices are presented.