William B. Knowlton

A Physical Model of the Temperature Dependence of the Current Through

In this paper, we investigate the characteristics of the defects responsible for the leakage current in the SiO2 and SiO2/HfO2 gate dielectric stacks in a wide temperature range (6 K-400 K). We simulated the temperature dependence of the I -V characteristics both at positive and negative gate voltages by applying the multiphonon trap-assisted tunneling model describing the charge transport through the dielectric. In the depletion/weak inversion regime, the current is limited by the supply of carriers available for tunneling. In strong inversion, the temperature dependence is governed by the charge transport mechanisms through the stacks; in particular, in SiO2/HfO2 dielectric stacks, the coupling of the injected carriers with the dielectric phonons at the trap sites is the dominant mechanism. Matching the simulation results to the measurement data allows extracting important trap parameters, e.g., the trap relaxation and ionization energies, which identify the atomic structure of the electrically active defects in the gate dielectric.

\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}

To fabricate quantum dot arrays with programmable periodicity, functionalized DNA origami nanotubes were developed. Selected DNA staple strands were biotin-labeled to form periodic binding sites for streptavidin-conjugated quantum dots. Successful formation of arrays with periods of 43 and 71 nm demonstrates precise, programmable, large-scale nanoparticle patterning; however, limitations in array periodicity were also observed. Statistical analysis of AFM images revealed evidence for steric hindrance or site bridging that limited the minimum array periodicity.

Stacks

Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO2) interfacial layer requires an even greater understanding of the energy band behavior. A program that quickly determines the band diagrams based on a simple analytical model was created. It is used to explore the behavior of various oxide stacks with the ability to easily vary important parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness. The usefulness of this program to predict potential reliability issues is also demonstrated

Programmable Periodicity of Quantum Dot Arrays with DNA Origami Nanotubes

Fluorescence resonance energy transfer (FRET) is a promising means of enabling information processing in nanoscale devices, but dynamic control over exciton pathways is required. Here, we demonstrate the operation of two complementary switches consisting of diffusive FRET transmission lines in which exciton flow is controlled by DNA. Repeatable switching is accomplished by the removal or addition of fluorophores through toehold-mediated strand invasion. In principle, these switches can be networked to implement any Boolean function.

Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)

Time-multiplexed etching, the Bosch process, is a technique consisting of alternating etch and deposition cycles to produce high aspect-ratio etched features. The Bosch process uses SF6 and C4F8 as etch and polymer deposition gases, respectively. In these experiments, polymer thickness is controlled by both C4F8 gas flow rates and by deposition cycle time. The authors show that polymer thickness can be used to control wall angle and curvature at the base of feature walls. Wall angle is found to be independent of trench width under thin-polymer deposition conditions. Experimental results are compared to results obtained by other researchers using the more conventional simultaneous etch/deposition technique.

DNA-Controlled Excitonic Switches

DNA origami templated self-assembly has shown its potential in creating rationally designed nanophotonic devices in a parallel and repeatable manner. In this investigation, we employ a multiscaffold DNA origami approach to fabricate linear waveguides of 10 nm diameter gold nanoparticles. This approach provides independent control over nanoparticle separation and spatial arrangement. The waveguides were characterized using atomic force microscopy and far-field polarization spectroscopy. This work provides a path toward large-scale plasmonic circuitry.

Polymer thickness effects on Bosch etch profiles

The gate leakage current of metal-oxide-semiconductors (MOSs) composed of hafnium oxide (HfO2) exhibits temperature dependence, which is usually attributed to the standard Poole-Frenkel (P-F) transport model. However, the reported magnitudes of the trap barrier height vary significantly. This paper explores the fundamental challenges associated with applying the P-F model to describe transport in HfO2/ SiO2 bilayers in n/p MOS field-effect transistors composed of 3- and 5-nm HfO2 on 1.1-nm SiO2 dielectric stacks. The extracted P-F trap barrier height is shown to be dependent on several variables including the following: the temperature range, method of calculating the electric field, electric-field range considered, and HfO2 thickness. P-F conduction provides a consistent description of the gate leakage current only within a limited range of the current values while failing to explain the temperature dependence of the 3-nm HfO2 stacks for gate voltages of less than 1 V, leaving other possible temperature-dependent mechanisms to be explored.

Multiscaffold DNA Origami Nanoparticle Waveguides

Novel devices incorporating multiple layers of new materials increase the complexity of device structures, particularly in field-effect transistors, capacitors, and nonvolatile memory (NVM). The mounting complexity of these devices increases the difficulty of generating energy band diagrams and performing device parameter calculations whether these calculations are done by hand, using spreadsheets, or via mathematical programs. Although finite-element Poisson-Schrodinger equation solvers are available to perform the calculations, the cost and time spent learning them can be a hindrance. A straightforward GUI interactive simulation tool is presented that quickly calculates and displays energy bands, electric fields, potentials, and charge distributions for 1-D metal-multilayered-dielectrics-semiconductor stacks. Fixed charge can be inserted into dielectric layers. The freeware program calculates device parameters, (e.g., effective oxide thickness, flat-band voltage (VFB), threshold voltage (Vt), stack capacitance) and layer parameters (e.g., capacitance, potential, electric field, tunneling distance). Calculated data can be exported. Using the simulation tool, trap-based flash NVM is examined. Device performance characteristics such as the Vt and VFB shifts of three different stacks are examined. Comparisons between the program and a finite-element Poisson-Schrodinger equation solver are performed to validate the programs accuracy.

Limitations of Poole–Frenkel Conduction in Bilayer

A promising application of DNA self-assembly is the fabrication of chromophore-based excitonic devices. DNA brick assembly is a compelling method for creating programmable nanobreadboards on which chromophores may be rapidly and easily repositioned to prototype new excitonic devices, optimize device operation, and induce reversible switching. Using DNA nanobreadboards, we have demonstrated each of these functions through the construction and operation of two different excitonic AND logic gates. The modularity and high chromophore density achievable via this brick-based approach provide a viable path toward developing information processing and storage systems.

\hbox{HfO}_{2}/\hbox{SiO}_{2}

Abstract We discuss the status of a cryogenic dark matter search beginning operation in the Stanford Underground Facility. The detectors will be cooled in a specially designed cryostat connected to a modified side access Oxford 400 dilution refrigerator. We discuss two detector designs and performance, the cryostat construction and operation, and the multi-level shield surrounding the cryostat. Finally, we will examine the limits which we will be able to set on WIMP dark matter with this experiment.