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Publication
Featured researches published by William Ward.
Meeting Abstracts | 2010
Jeffrey Dysard; Vlasta Brusic; Paul M. Feeney; Steven Grumbine; Kevin Moeggenborg; Glenn Whitener; William Ward; Gregory Burns; Kyose Choi
In order to enable high-k metal gate technology, new CMP steps and slurries are needed to meet the stringent planarity and defect requirements for device performance. This paper will describe several of these slurry technologies in detail, including poly-open-polish, Aluminum CMP, and improvements required in Tungsten polishing. The keys to these technologies are outlined and polishing performance given in detail. The critical mechanisms involved in the material polishing for each of these steps are also introduced. All of these new technologies are needed in order to build a successful high-k metal gate device for advanced node integration via a replacement gate build strategy.
Archive | 2008
Jeffrey Dysard; Sriram Anjur; Steven K. Grumbine; Daniela White; William Ward
Archive | 2009
Steven K. Grumbine; Chul Woo Nam; William Ward; Ramasubramanyam Nagarajan
Archive | 2015
Steven Grumbine; Jeffrey Dysard; Lin Fu; William Ward; Glenn Whitener
Archive | 2010
Kevin Moeggenborg; William Ward; Ming-Shih Tsai; Francesco De Rege Thesauro
Archive | 2013
Dimitry Dinega; Kevin Moeggenborg; William Ward; Daniel Mateja
Archive | 2017
Steven Grumbine; Li Shoutian; William Ward; Singh Pankaj; Jeffrey Dysard
Archive | 2015
Steven Grumbine; Li Shoutian; William Ward; Singh Pankaj; Jeffrey Dysard
Archive | 2015
Kevin Moeggenborg; William Ward; Tsai Ming-Shih; Francesco De Rege Thesauro
Archive | 2015
Steven Grumbine; Jeffrey Dysard; Lin Fu; William Ward; Glenn Whitener
