Steven Grumbine
Cabot Corporation
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Meeting Abstracts | 2010
Jeffrey Dysard; Vlasta Brusic; Paul M. Feeney; Steven Grumbine; Kevin Moeggenborg; Glenn Whitener; William Ward; Gregory Burns; Kyose Choi
In order to enable high-k metal gate technology, new CMP steps and slurries are needed to meet the stringent planarity and defect requirements for device performance. This paper will describe several of these slurry technologies in detail, including poly-open-polish, Aluminum CMP, and improvements required in Tungsten polishing. The keys to these technologies are outlined and polishing performance given in detail. The critical mechanisms involved in the material polishing for each of these steps are also introduced. All of these new technologies are needed in order to build a successful high-k metal gate device for advanced node integration via a replacement gate build strategy.
Archive | 1997
Steven Grumbine; Christopher C. Streinz; Brian L. Mueller
Archive | 1998
Steven Grumbine; Christopher C. Streinz; Eric W. G. Hoglund
Archive | 1997
Christopher C. Streinz; Matthew Neville; Steven Grumbine; Brian L. Mueller
Archive | 2000
Steven Grumbine; Christopher C. Streinz; Shumin Wang
Archive | 2003
Shumin Wang; Steven Grumbine; Christopher C. Streinz; Eric W. G. Hoglund
Archive | 2001
Bradley J. Staley; Gregory H. Bogush; Jeffrey P. Chamberlain; Paul M. Feeney; Alicia F. Walters; Steven Grumbine; Brian L. Mueller; David J. Schroeder
Archive | 2001
Steven Grumbine; Christopher C. Streinz; Brian L. Mueller
Archive | 2010
Steven Grumbine; Renjie Zhou; Zhan Chen; Phillip W. Carter
Archive | 1997
Steven Grumbine; Brian L. Mueller; Christopher C. Streinz; シー.ストレインズ クリストファー; ケー.グランバイン スティーブン; エル.ミューラー ブライアン