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Wolfgang Dr. Werner

Infineon Technologies

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Publication

Featured researches published by Wolfgang Dr. Werner.

Archive | 2004

Vertical trench transistor, has transistor cells with body regions and body contact regions arranged between body regions and contact holes, where dimensions and designs of body regions and body contact regions are selected

Franz Hirler; Joachim Krumrey; Wolfgang Dr. Werner

Archive | 2002

Production of an electrically conducting connection during the production of a source-down transistor comprises forming a recess extending from the front side up to a first layer

Hermann Dr. Fischer; Josef Fugger; Werner Kanert; Thorsten Dr. Mayer; Wolfgang Dr. Werner

Archive | 2003

Device for interrupting current flow to semiconductor body of semiconductor component for power MOSFET comprises connecting unit for connecting component to external current cycle, and connecting line

Alfons Graf; Frank Klotz; Christoph Schulz-Linkholt; Wolfgang Dr. Werner

Archive | 2003

Integrated circuit configuration having a structure for reducing a minority charge carrier current

Ludwig Rossmeier; Norbert Krischke; Wolfgang Dr. Werner; Peter Nelle

Archive | 1996

Manufacturing process for a micromechanical element with movable structure

Wolfgang Dr. Werner

Archive | 2005

Field-effect semiconductor component, has bipolar transistor structure in transistor body with weakly and strongly doped zones

Jenö Tihanyi; Wolfgang Dr. Werner

Archive | 2007

Compensation element e.g. planar transistor, has compensation zones arranged in direction transverse to current flow direction offset to zones in adjacent section in current flow direction

Anton Mauder; Stefan Sedlmaier; Wolfgang Dr. Werner

Archive | 2003

Semiconductor component used as a power transistor comprises a layer structure with a semiconductor chip, a support for the chip and an electrically insulating layer made from nano-particles of an electrically insulating material

Ralf Otremba; Wolfgang Dr. Werner

Archive | 2005

Semiconductor assembly device containing nanoparticle isolated layer

Wolfgang Dr. Werner; Ralf Otremba

Archive | 2007

Semiconductor component i.e. insulated gate bipolar transistor, has semiconductor region insulated against base region of n-channel transistor at lower side pointing to base region by another semiconductor region

Franz Hirler; Thomas Raker; Wolfgang Dr. Werner

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Anton Mauder

Infineon Technologies

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Hans-Joachim Schulze

Infineon Technologies

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Helmut Strack

Siemens

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Hermann Dr. Fischer

Infineon Technologies

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Jenö Tihanyi

Infineon Technologies

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Werner Kanert

Infineon Technologies

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Josef Fugger

Infineon Technologies

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Thorsten Dr. Mayer

Infineon Technologies

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Ralf Otremba

Infineon Technologies

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Alfons Graf

Infineon Technologies

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