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Wolfgang Siebert

Hess Corporation

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Publication

Featured researches published by Wolfgang Siebert.

Archive | 2003

Epitaxially coated semiconductor wafer and process for producing it

Wolfgang Siebert; Peter Storck

Archive | 2001

Method for the production of an epitaxially grown semiconductor wafer

Rüdiger Schmolke; Reinhard Schauer; Günther Obermeier; Dieter Gräf; Peter Storck; Klaus Messmann; Wolfgang Siebert

Archive | 2003

Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer

Wilfried von Ammon; Ruediger Schmolke; Peter Storck; Wolfgang Siebert

Archive | 2001

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND ITS USE

Dieter Graef; Klaus Mesmann; Guenther Obermeier; Reinhard Schauer; Rüdiger Schmolke; Wolfgang Siebert; Peter Storck; ジーベルト ヴォルフガング; オーバーマイアー ギュンター; メスマン クラウス; グレーフ ディーター; シュトルク ペーター; シャウアー ラインハルト; シュモルケ リューディガー

Archive | 1999

Semiconductor wafer has a rear side and a front side with an epitaxial layer having a specified maximum density of scattered light centers

Wolfgang Siebert; Peter Storck

Archive | 2001

Process for producting an epitaxial layer on a semiconductor wafer

D Gräf; Klaus Messmann; Günther Obermeier; Reinhard Schauer; Rüdiger Schmolke; Wolfgang Siebert; Peter Storck

Archive | 2004

Epitaxially coated semiconductor wafer

Wilfried von Ammon; Ruediger Schmolke; Peter Storck; Wolfgang Siebert

Archive | 2002

Verfahren und Vorrichtung zur epitaktischen Beschichtung einer Halbleiterscheibe sowie epitaktisch beschichtete Halbleiterscheibe

Wilfried von Ammon; Ruediger Schmolke; Peter Storck; Wolfgang Siebert

Archive | 2002

Process for calibrating the temperature measuring system of a high temperature reactor comprises preparing a calibrating plate with a doping material, determining the thickness of the layer, thermally treating, and further processing

Peter Storck; Wolfgang Siebert; Joerg Ziegler

Archive | 2002

Epitaxial coating applying method of semiconductor wafer in chemical vapor deposition reactor, involves exposing back surface of semiconductor wafer to ejection gas containing specific amount of hydrogen

Wilfried von Ammon; Ruediger Schmolke; Peter Storck; Wolfgang Siebert

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Peter Storck

Hess Corporation

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Wilfried von Ammon

Hess Corporation

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Reinhard Schauer

Hess Corporation

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Rüdiger Schmolke

Hess Corporation

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Günther Obermeier

Hess Corporation

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Klaus Messmann

Hess Corporation

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D Gräf

Hess Corporation

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Dieter Gräf

IMEC

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