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Dive into the research topics where Wu Xiulong is active.

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Featured researches published by Wu Xiulong.


ieee international workshop on vlsi design and video technology | 2005

A circuit macromodel of high voltage LDMOS based on numerical simulation

Wu Xiulong; Chen Junning; Ke Daoming; Gao Shan; Liu Qi

Lateral double-diffused MOSFET (LDMOS) is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts, linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates a macromodel of LDMOS circuits. The model contains fewer parameters that are easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits. In the end, we give an application of our model.


international conference on wireless communications, networking and mobile computing | 2007

A New Design of Voltage Controlled Oscillator

Wu Xiulong; Chen Junning; Mei Zhenfei; Zhao Yuhao; Xu Tailong

This paper designed a new low phase noise voltage- controlled oscillator (VCO) with harmonic filtering resistor and source damping resistor. The author analyzed and modulated the results by the simulator of Mentor Graphics in a 0.35-um CMOS process, and achieved the optimization scheme in the end. The simulation result shows the VCO can reach a phase noise of - 124.9 dBc/Hz at 1 MHz offset while working at 4.6 GHz in a 3 mA excursion current. During the 0 to 3 controlled voltage the tuning range can reach 18.5%, and the power consumption is only 7.09 mW.


international conference on wireless communications, networking and mobile computing | 2007

A Macromodel of MOSFET for Deep Submicron Analog Circuit Simulation

Wu Xiulong; Chen Junning; Mei Zhenfei; Zhao Yuhao; Xu Tailong

The previous models and equivalent circuits of deep submicron MOSFET are extremely complicated, for diversified short-channel effects. Based on the nonlinear resistances of devices, we get an I-V equation and create a simple equivalent circuit macro-model. Compared with the previous models, the equation is an analytic expression and has fewer parameters and no discontinuous point of linear and saturation regions .The convergence becomes easier and the calculated speed becomes faster when the equivalent circuit macro-model is used to simulate the low voltage analog IC. In the end, we give an application of our model to validate the accuracy.


Archive | 2011

Sub-threshold storing unit circuit with high density and high robustness

Bai Na; Wu Xiulong; Tan Shoubiao; Li Zhengping; Meng Jian; Chen Junning; Xu Chao; Dai Yuehua; Qiu Mingqiang


Archive | 2015

Programmable static random access memory (SRAM) time sequence control system based on build-in self-test (BIST) control

Bai Na; Wu Xiulong; Tan Shoubiao; Li Zhengping; Meng Jian; Chen Junning; Xu Chao; Hong Qi; Zhou Yan


Archive | 2013

Programmable static random access memory (SRAM) sequential control circuit based on built-in self-test (BIST) control

Bai Na; Wu Xiulong; Tan Shoubiao; Li Zhengping; Meng Jian; Chen Junning; Xu Chao; Hong Qi; Zhou Yan


networking architecture and storages | 2012

Bitline Leakage Current Compensation Circuit for High-Performance SRAM Design

Li Ruixing; Bai Na; Lv Baitao; Zhu Jiafeng; Wu Xiulong


cyber-enabled distributed computing and knowledge discovery | 2011

A 12T Subthreshold SRAM Bit-Cell for Medical Device Application

Hu Chen; Yang Jun; Zhang Meng; Wu Xiulong


international conference on wireless communications, networking and mobile computing | 2008

Design of High-Speed Charge-Pump in PLL

Wu Xiulong; Chen Junning; Ke Daoming; Zhang Xing-Jian


Archive | 2017

Be applied to static RAM's high -speed address decoder of type that latchs flowing water structure

Zhang Jingbo; Wu Xiulong; Guan Lijun; Xu Chenjie; Lin Zhiting; Peng Chunyu; Chen Junning

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Li Xuan

University of Science and Technology of China

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